Manufacturable multi-emitter laser diode
First Claim
1. A method for manufacturing a multi-emitter laser device, the method comprising:
- providing a substrate member having a surface region;
forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material, an n-type cladding region overlying the release material, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer; and
an interface region overlying the p-type cladding region;
forming a plurality of dice by at least patterning the epitaxial material and defining mesa regions to provide a plurality of epitaxial mesa dice regions, each pair of epitaxial mesa dice regions being characterized by a first pitch between the epitaxial mesa dice regions;
subjecting the release material to an energy source to fully or partially remove the release material;
bonding the interface region associated with at least one of the plurality of epitaxial mesa dice regions to a carrier wafer to form a bonded structure wherein at least a pair of bonded epitaxial mesa dice regions are arranged in a substantially parallel configuration on the carrier wafer with a lateral spacing defined by a second pitch;
initiating a release of the substrate member to complete a transfer of the bonded epitaxial mesa dice regions to the carrier wafer to provide transferred epitaxial mesa dice regions on the carrier wafer at the second pitch;
processing the transferred epitaxial mesa dice regions on the carrier wafer to form a plurality of laser stripe regions;
processing the carrier wafer with the plurality of transferred epitaxial mesa dice regions comprising the plurality of laser stripe regions to form a plurality of laser diode regions each configured as a multi-emitter laser diode device;
wherein a pair of the laser diode regions is spaced by a third pitch from an adjacent pair of the laser diode regions; and
singulating each of the plurality of laser diode regions in the multi-emitter laser diode device to form individual laser diode devices.
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Accused Products
Abstract
A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
241 Citations
26 Claims
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1. A method for manufacturing a multi-emitter laser device, the method comprising:
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providing a substrate member having a surface region; forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material, an n-type cladding region overlying the release material, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer; and
an interface region overlying the p-type cladding region;forming a plurality of dice by at least patterning the epitaxial material and defining mesa regions to provide a plurality of epitaxial mesa dice regions, each pair of epitaxial mesa dice regions being characterized by a first pitch between the epitaxial mesa dice regions; subjecting the release material to an energy source to fully or partially remove the release material; bonding the interface region associated with at least one of the plurality of epitaxial mesa dice regions to a carrier wafer to form a bonded structure wherein at least a pair of bonded epitaxial mesa dice regions are arranged in a substantially parallel configuration on the carrier wafer with a lateral spacing defined by a second pitch; initiating a release of the substrate member to complete a transfer of the bonded epitaxial mesa dice regions to the carrier wafer to provide transferred epitaxial mesa dice regions on the carrier wafer at the second pitch; processing the transferred epitaxial mesa dice regions on the carrier wafer to form a plurality of laser stripe regions; processing the carrier wafer with the plurality of transferred epitaxial mesa dice regions comprising the plurality of laser stripe regions to form a plurality of laser diode regions each configured as a multi-emitter laser diode device;
wherein a pair of the laser diode regions is spaced by a third pitch from an adjacent pair of the laser diode regions; andsingulating each of the plurality of laser diode regions in the multi-emitter laser diode device to form individual laser diode devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification