Power semiconductor module, power converting apparatus and railway car

• US 9,520,802 B2
• Filed: 01/18/2010
• Issued: 12/13/2016
• Est. Priority Date: 01/18/2010
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Tanaka, Takeshi, Nakayama, Yasushi
• Primary Examiner(s): Chan, Kawing
• Application Number:
  US13/517,904
• Publication Number:
  US 20120256574A1
• Time in Patent Office: 2,521 Days
• Field of Search: 318/400.27, 318/400.17, 318/400.26, 318/400.29, 318/801, 318/803, 438/142, 438/613, 438/519, 438/522, 438/965, 438/268, 438/931, 438/105, 438/317, 257/288, 257/341, 257/350, 257/E29.027, 257/E29.197, 257/77, 257/281, 363/56.01, 363/141, 363/126, 310/12.09, 361/216, 361/806, 361/783
• US Class Current: 1/1
• CPC Class Codes: B60L 15/007 Physical arrangements or structures of drive train converters specially adapted for the propulsion motors of electric vehicles
• CPC Class Codes: B60L 2200/26 Rail vehicles
• CPC Class Codes: B60L 3/003 relating to inverters
• CPC Class Codes: B60L 50/51 characterised by AC-motors
• CPC Class Codes: B60L 7/14 for vehicles propelled by ac motors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: Y02T 10/64 Electric machine technologies in electromobility
• CPC Class Codes: Y02T 10/70 Energy storage systems for electromobility, e.g. batteries

Abstract

A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.

Claims

1. A power semiconductor module comprising:

a first element pair formed by connecting, in reverse parallel to each other, a first switching element and a first diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the first diode element with respect to an occupied area of the first switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the first switching element; and

a second element pair formed by connecting, in reverse parallel to each other, a second switching element and a second diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the second diode element with respect to an occupied area of the second switching element to be equal to or higher than 15% and lower than 45% of the occupied area of second switching element, wherein

the first switching element and the first diode element are arranged so as not to overlap when viewed in plan view,

the second switching element and the second diode element are arranged so as not to overlap when viewed in plan view, and

the first element pair and the second element pair are housed in one module and configured as a 2-in-1 module.

2. The power semiconductor module according to claim 1, wherein the first and second diode elements and the first and second switching elements are formed in sizes for equalizing temperature rises.

3. The power semiconductor module according to claim 1, wherein the wideband gap semiconductor is semiconductor formed using silicon carbide, a gallium nitride base material or diamond.

4. The power semiconductor module according to claim 1, wherein the first and second switching elements are IGBT elements or MOSFET elements.

5. The power semiconductor module according to claim 1, further comprising:

a first collector electrode to which a collector of the first switching element and a cathode of the first diode element are connected;

a first emitter electrode to which an emitter of the first switching element and an anode of the first diode element are connected;

a second collector electrode to which a collector of the second switching element and a cathode of the second diode element are connected; and

a second emitter electrode to which an emitter of the second switching element and an anode of the second diode element are connected,

the first collector electrode, the first emitter electrode, the second collector electrode, and the second emitter electrode being provided on an upper surface of the power semiconductor module.

6. The power semiconductor module according to claim 5, wherein the first and second diode elements and the first and second switching elements are formed in sizes for equalizing temperature rises.

7. The power semiconductor module according to claim 1, wherein the first and second diode elements and the first and second switching elements include a plurality of chips, and a number of the chips included in the first and second diode elements is larger than a number of the chips included in the first and the second switching elements.

8. A power converting apparatus comprising a power semiconductor module configured as a 2-in-1 module that houses:

a first element pair formed by connecting, in reverse parallel to each other, a first switching element and a first diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the first diode element with respect to an occupied area of the first switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the first switching element; and

a second element pair formed by connecting, in reverse parallel to each other, a second switching element and a second diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area the second diode element with respect to an occupied area of the second switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the second switching element, wherein the first switching element and the first diode element are arranged so as not to overlap when viewed in plan view, and the second switching element and the second diode element are arranged so as not to overlap when viewed in plan view.

9. The power converting apparatus according to claim 8 mounted on a vehicle and configured to supply electric power to an electric motor that drives the vehicle, wherein

an electric current flows to the first diode element and the second diode element during acceleration of the vehicle, and

an electric current flows to the first switching element and the second switching element during deceleration of the vehicle.

10. The power converting apparatus according to claim 8 mounted on a vehicle and configured to supply electric power to an electric motor that drives the vehicle, wherein

an electric current flows to the first switching element and the second switching element during acceleration of the vehicle, and

an electric current flows to the first diode element and the second diode element during deceleration of the vehicle.

11. A railroad vehicle comprising:

the power converting apparatus according to claim 8 mounted on a vehicle and configured to supply electric power to an electric motor that drives the vehicle; and

the electric motor supplied with the electric power from the power converting apparatus to generate a driving force.

12. The power converter apparatus according to claim 8, wherein the first and second diode elements and the first and second switching elements include a plurality of chips, and a number of the chips included in the first and second diode elements is larger than a number of the chips included in the first and the second switching elements.

13. The power converter apparatus according to claim 8, wherein the first and second diode elements and the first and second switching elements are formed in sizes for equalizing temperature rises.