Power semiconductor module, power converting apparatus and railway car
First Claim
1. A power semiconductor module comprising:
- a first element pair formed by connecting, in reverse parallel to each other, a first switching element and a first diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the first diode element with respect to an occupied area of the first switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the first switching element; and
a second element pair formed by connecting, in reverse parallel to each other, a second switching element and a second diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the second diode element with respect to an occupied area of the second switching element to be equal to or higher than 15% and lower than 45% of the occupied area of second switching element, whereinthe first switching element and the first diode element are arranged so as not to overlap when viewed in plan view,the second switching element and the second diode element are arranged so as not to overlap when viewed in plan view, andthe first element pair and the second element pair are housed in one module and configured as a 2-in-1 module.
1 Assignment
0 Petitions
Accused Products
Abstract
A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.
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Citations
13 Claims
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1. A power semiconductor module comprising:
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a first element pair formed by connecting, in reverse parallel to each other, a first switching element and a first diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the first diode element with respect to an occupied area of the first switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the first switching element; and a second element pair formed by connecting, in reverse parallel to each other, a second switching element and a second diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the second diode element with respect to an occupied area of the second switching element to be equal to or higher than 15% and lower than 45% of the occupied area of second switching element, wherein the first switching element and the first diode element are arranged so as not to overlap when viewed in plan view, the second switching element and the second diode element are arranged so as not to overlap when viewed in plan view, and the first element pair and the second element pair are housed in one module and configured as a 2-in-1 module. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A power converting apparatus comprising a power semiconductor module configured as a 2-in-1 module that houses:
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a first element pair formed by connecting, in reverse parallel to each other, a first switching element and a first diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area of the first diode element with respect to an occupied area of the first switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the first switching element; and a second element pair formed by connecting, in reverse parallel to each other, a second switching element and a second diode element formed by a wide band gap semiconductor in a size for setting a ratio of an occupied area the second diode element with respect to an occupied area of the second switching element to be equal to or higher than 15% and lower than 45% of the occupied area of the second switching element, wherein the first switching element and the first diode element are arranged so as not to overlap when viewed in plan view, and the second switching element and the second diode element are arranged so as not to overlap when viewed in plan view. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification