Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods
First Claim
1. A power amplifier module comprising:
- a first die including a power amplifier and a passive component having an electrical property that depends on a condition of the first die, the power amplifier including a bipolar transistor having a collector, a base, and an emitter, the collector having a doping concentration of at least about 3×
1016 cm−
3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and
a second die in communication with the first die, the second die including a bias circuit configured to generate a bias signal based at least partly on an indication of the electrical property of the passive component of the first die and to provide the bias signal to the power amplifier.
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Abstract
One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.
215 Citations
20 Claims
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1. A power amplifier module comprising:
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a first die including a power amplifier and a passive component having an electrical property that depends on a condition of the first die, the power amplifier including a bipolar transistor having a collector, a base, and an emitter, the collector having a doping concentration of at least about 3×
1016 cm−
3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; anda second die in communication with the first die, the second die including a bias circuit configured to generate a bias signal based at least partly on an indication of the electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An apparatus comprising:
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a first die including a power amplifier, the power amplifier including a heterojunction bipolar transistor having a collector, a base, and an emitter, the collector having a doping concentration of at least about 3×
1016 cm−
3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base, and the first die further including a semiconductor resistor having a resistive layer that is formed from substantially same material as a layer of the heterojunction bipolar transistor; anda second die in communication with the first die, the second die including a bias circuit configured to generate a bias signal based at least partly on an indication of a resistance of the semiconductor resistor of the first die and to provide the bias signal to the power amplifier. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A power amplifier module comprising:
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a packaging substrate configured to receive a plurality of components; a first die mounted on the packaging substrate, the first die including a power amplifier including a GaAs bipolar transistor having a collector, a base, and an emitter, the collector having a doping concentration of at least about 3×
1016 cm−
3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base, and the first die further including a passive component having an electrical property that depends on a condition of the first die; anda second die mounted on the packaging substrate and in communication with the first die, the second die including a bias circuit configured to generate a bias signal based at least partly on an indication of the electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. - View Dependent Claims (19, 20)
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Specification