Apparatus and method for testing electric conductors

• US 9,523,729 B2
• Filed: 09/13/2013
• Issued: 12/20/2016
• Est. Priority Date: 09/13/2013
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Nelhiebel, Michael, Zagar, Bernhard, Osterloh, Achim, Fanic, Petar
• Primary Examiner(s): Hollington, Jermele M
• Assistant Examiner(s): RAJAPUTRA, SURESH KS
• Application Number:
  US14/026,822
• Publication Number:
  US 20150077151A1
• Time in Patent Office: 1,194 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G01R 1/07 Non contact-making probes
• CPC Class Codes: G01R 15/205 using magneto-resistance devices, e.g. field plates
• CPC Class Codes: G01R 15/207 Constructional details independent of the type of device used
• CPC Class Codes: G01R 31/2853 Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections G01R31/31717 takes precedence; test of chip-to-PCB or lead-to-PCB connections G01R31/66
• CPC Class Codes: G01R 31/58 Testing of lines, cables or conductors testing of electric windings G01R31/72

Abstract

A testing device for testing electric conductors includes a probe configured to measure a magnetic field caused by a current in one or more electric conductors of a device under testing (DUT). An output generator configured to generate output data, wherein the output data depend on the measured magnetic field.

Claims

1. A testing device for testing electric conductors, comprising:

a probe configured to measure a magnetic field caused by a current flowing through at least two bonding wires of a semiconductor device when a voltage is applied to the semiconductor device, wherein the at least two bonding wires are arranged in a parallel connection; and

a control unit configured to decide whether one or more of the least two bonding wires is electrically defective, wherein the decision depends on the measured magnetic field.

2. The device according to claim 1, wherein the testing device is configured to test more than one semiconductor device simultaneously.

3. The device according to claim 1, further comprising:

a positioning stage configured to arrange the probe in predefined positions over the bonding wires of the semiconductor device.

4. The device according to claim 1, wherein the probe comprises one or more giant magneto resistance elements.

5. The device according to claim 1, wherein the control unit is configured to generate output data when the semiconductor device comprises one or more defective electric conductors and to generate different output data when the semiconductor device comprises no defective conductors.

6. The device according to claim 1, wherein the control unit is configured to generate output data when the semiconductor device comprises a specific defective electric conductor and to generate different data output from a semiconductor device wherein the specific electric conductor is not defective.

7. The device according to claim 1, wherein the probe comprises a single axis magnetic field sensor.

8. The device according to claim 1, wherein the probe comprises a triple axis magnetic field sensor.

9. A method of testing electric conductors, the method comprising:

providing a semiconductor device, the semiconductor device comprising at least two bonding wires, wherein the at least two bonding wires are arranged in a parallel connection;

providing a testing device comprising a first probe configured to measure a first magnetic field caused by an electric current in the at least two bonding wires;

applying a voltage to the semiconductor device such that the electric current may flow through the at least two bonding wires;

measuring the first magnetic field; and

deciding whether one or more of the at least two bonding wires is electrically defective.

10. The method according to claim 9, further comprising:

providing a reference device, the reference device comprising one or more second electric conductors;

providing a second probe configured to measure a second magnetic field caused by an electric current in the one or more second electric conductors;

applying a voltage to the reference device such that an electric current may flow through the one or more second electric conductors;

measuring a second magnetic field caused by the electric current in the one or more second electric conductors; and

generating a data output by subtracting measurement data of the second magnetic field from measurement data of the first magnetic field.

11. The method according to claim 10, further comprising:

comparing the data output to some reference data; and

deciding if the semiconductor device meets a certain criterion based on the comparison.

12. The method according to claim 9, further comprising:

producing a data output in the testing device, wherein the data output depends on the measured magnetic field; and

comparing the output with some reference data.

13. The method according to claim 9, further comprising generating data output in the testing device from a semiconductor device comprising one or more defective conductors and generating different data output from a semiconductor device comprising no defective conductors.

14. The method according to claim 9, further comprising generating data output in the testing device from a semiconductor device comprising a specific defective electric conductor and generating different data output from a semiconductor device wherein the specific electric conductor is not defective.

15. The method according to claim 9, further comprising:

comparing the magnetic field measured at different points above the semiconductor device.