Touch screen and manufacturing method thereof
First Claim
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1. A method of manufacturing a touch screen, comprising the steps of:
- a) forming a conductive layer on a substrate;
b) forming an etching resist pattern on the conductive layer; and
c) forming a first conductive pattern having a line width smaller than the line width of the etching resist pattern by over-etching the conductive layer by using the etching resist pattern as a mask,wherein in the step b), a line edge roughness (LER) of the etching resist pattern is controlled to be 0.1 to 5 micrometers,wherein in step c), an etching time of the conductive layer ranges from a just-etching time to a time 2,000% more than the just-etching time, and the just-etching time means a time required when a pattern is etched in the same shape as the shape of the mask,wherein the first conductive pattern has a line width of 100 micrometer or less, andwherein the first conductive pattern has a pattern shape formed continuously on an area of 7 inch or more.
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Abstract
The present invention provides a method of manufacturing a touch screen, comprising the steps of: a) forming a conductive layer on a substrate; b) forming an etching resist pattern on the conductive layer; and c) forming a conductive pattern having a line width smaller than the line width of the etching resist pattern by over-etching the conductive layer by using the etching resist pattern and a touch screen manufactured by the method. According to the present invention, a touch screen comprising a conductive pattern having an ultrafine line width can be economically and efficiently provided.
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Citations
9 Claims
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1. A method of manufacturing a touch screen, comprising the steps of:
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a) forming a conductive layer on a substrate; b) forming an etching resist pattern on the conductive layer; and c) forming a first conductive pattern having a line width smaller than the line width of the etching resist pattern by over-etching the conductive layer by using the etching resist pattern as a mask, wherein in the step b), a line edge roughness (LER) of the etching resist pattern is controlled to be 0.1 to 5 micrometers, wherein in step c), an etching time of the conductive layer ranges from a just-etching time to a time 2,000% more than the just-etching time, and the just-etching time means a time required when a pattern is etched in the same shape as the shape of the mask, wherein the first conductive pattern has a line width of 100 micrometer or less, and wherein the first conductive pattern has a pattern shape formed continuously on an area of 7 inch or more. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification