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Chip level heat dissipation using silicon

  • US 9,524,917 B2
  • Filed: 03/18/2015
  • Issued: 12/20/2016
  • Est. Priority Date: 04/23/2014
  • Status: Active Grant
First Claim
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1. A semiconductor apparatus, comprising:

  • a semiconductor chip, comprising;

    a first silicon substrate with opposing first and second surfaces,a semiconductor device formed at or in the first surface,a plurality of first contact pads formed at the first surface which are electrically coupled to the semiconductor device,a layer of thermal conductive material on the second surface, anda plurality of first vias formed partially through the layer of thermal conductive material; and

    a heat sink that includes;

    a second silicon substrate with opposing first and second surfaces,a plurality of second vias formed into one of the first and second surfaces defining first fins of the second silicon substrate between the second vias,a layer of thermal conductive material in the second vias,wherein the second surface of the first silicon substrate is mounted to the first surface of the second silicon substrate.

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