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Package-in-package using through-hole via die on saw streets

  • US 9,524,938 B2
  • Filed: 03/18/2013
  • Issued: 12/20/2016
  • Est. Priority Date: 05/04/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor die;

    an insulating material disposed around a peripheral region of the first semiconductor die including a first surface of the insulating material coplanar with a first surface of the first semiconductor die;

    a conductive via formed through the insulating material with a side surface of the conductive via coplanar with a side surface of the insulating material;

    a bond pad formed on the first surface of the first semiconductor die;

    a conductive trace formed between the bond pad and the conductive via; and

    a second semiconductor die disposed over the first surface of the first semiconductor die.

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