Package-in-package using through-hole via die on saw streets
First Claim
Patent Images
1. A semiconductor device, comprising:
- a first semiconductor die;
an insulating material disposed around a peripheral region of the first semiconductor die including a first surface of the insulating material coplanar with a first surface of the first semiconductor die;
a conductive via formed through the insulating material with a side surface of the conductive via coplanar with a side surface of the insulating material;
a bond pad formed on the first surface of the first semiconductor die;
a conductive trace formed between the bond pad and the conductive via; and
a second semiconductor die disposed over the first surface of the first semiconductor die.
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Abstract
A semiconductor device includes a first die having top, bottom, and peripheral surfaces. A bond pad is formed over the top surface. An organic material is connected to the first die and disposed around the peripheral surface. A via hole is formed in the organic material. A metal trace connects the via hole to the bond pad. A conductive material is deposited in the via hole. A redistribution layer (RDL) has an interconnection pad disposed over the top surface of the first die.
62 Citations
23 Claims
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1. A semiconductor device, comprising:
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a first semiconductor die; an insulating material disposed around a peripheral region of the first semiconductor die including a first surface of the insulating material coplanar with a first surface of the first semiconductor die; a conductive via formed through the insulating material with a side surface of the conductive via coplanar with a side surface of the insulating material; a bond pad formed on the first surface of the first semiconductor die; a conductive trace formed between the bond pad and the conductive via; and a second semiconductor die disposed over the first surface of the first semiconductor die. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device, comprising:
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a first semiconductor die; an insulating material disposed around a peripheral region of the first semiconductor die including a surface of the insulating material coplanar with a surface of the first semiconductor die; a conductive via formed through the insulating material with a top surface, a side surface, and a bottom surface of the conductive via exposed from the insulating material; a bond pad formed on the surface of the first semiconductor die; and a conductive trace coupled between the conductive via and the bond pad. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a first semiconductor die; an insulating material disposed around a peripheral region of the first semiconductor die; a half-cut conductive via formed through the insulating material; and a conductive layer formed on a surface of the first semiconductor die and a surface of the insulating material and coupled to the conductive via. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a first semiconductor die; an insulating material disposed around a peripheral region of the first semiconductor die; a conductive via formed through the insulating material with a side surface of the conductive via exposed at a side surface of the insulating material; and a conductive trace formed on a surface of the first semiconductor die and extending to the conductive via. - View Dependent Claims (20, 21, 22, 23)
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Specification