Switching system and method
First Claim
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1. A Radio Frequency (RF) system comprising:
- a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI), each transistor switching element having a resistor coupled to a gate region of the transistor switching element;
a digital control block configured to control an on-off state of the transistor switching elements; and
a filter coupled between the digital control block and a gate of each of the transistor switching elements;
wherein each filter is configured to block unwanted high power RF voltage signals from the RF switch from reaching the digital control block and to reduce non-linearities in the RF switch.
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Abstract
The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements.
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Citations
23 Claims
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1. A Radio Frequency (RF) system comprising:
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a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI), each transistor switching element having a resistor coupled to a gate region of the transistor switching element; a digital control block configured to control an on-off state of the transistor switching elements; and a filter coupled between the digital control block and a gate of each of the transistor switching elements; wherein each filter is configured to block unwanted high power RF voltage signals from the RF switch from reaching the digital control block and to reduce non-linearities in the RF switch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A Radio Frequency (RF) system comprising:
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a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI), each transistor switching element having a resistor coupled to a gate region of the transistor switching element; a digital control block; and a negative voltage generator; the system characterised by; the digital control block being configured to control an on-off state of the transistor switching elements, the digital control block comprising a decoder circuit, a level shifter configured to receive negative voltage generated in the negative voltage generator, and a filter positioned between the outputs of the level shifter and the resistors coupled to the gate regions of each of the transistor switching elements, wherein each filter is configured to block unwanted high power RF signals from the RF switch from reaching the level shifter, the decoder circuit, and the negative voltage generator and to reduce non-linearities in the RF switch, and wherein at least one transistor comprises a connected drain-source resistor (RDS) to improve linearity performance of the RF system.
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23. A Radio Frequency (RF) system comprising:
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a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) substrate for switching at least one or more RF signals, said SOI comprising a bulk substrate region and a buried oxide region; a digital control block configured to control an on-off state of the transistor switching elements; a filter coupled to a gate bias line of each of said transistor switching elements, the filter adapted to block unwanted high power RF signals from the RF switch from reaching the digital control block; and a filter coupled to a body bias line of each of said transistor switching elements, the filter adapted to block unwanted high power RF signals from the RF switch from reaching the digital control block and to reduce non-linearities in the RF switch.
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Specification