Method of manufacturing a spacer supported lateral channel FET
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- forming a plurality of trenches extending into a semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches;
disposing a trench fill material in the trenches, the trench fill material extending above the first main surface of the semiconductor material;
forming sacrificial spacers on the semiconductor material adjacent opposing sides of the trench fill material;
forming gate electrodes on the first main surface of the semiconductor material adjacent the sacrificial spacers, the gate electrodes having the same alignment with respect to the trenches, the gate electrodes defining lateral channel regions in the mesas under the gate electrodes;
removing the sacrificial spacers after formation of the gate electrodes;
forming source regions in a region of the mesas; and
forming a drain region spaced apart from the source regions.
1 Assignment
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Accused Products
Abstract
A semiconductor device is manufactured by forming a plurality of trenches extending into a semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. A trench fill material is disposed in the trenches, the trench fill material extending above the first main surface of the semiconductor material. Sacrificial spacers are formed on the semiconductor material adjacent opposing sides of the trench fill material, and gate electrodes are formed on the first main surface of the semiconductor material adjacent the sacrificial spacers. The gate electrodes have the same alignment with respect to the trenches and define lateral channel regions in the mesas under the gate electrodes. The sacrificial spacers are removed after formation of the gate electrodes. Source regions are formed in a region of the mesas, and a drain region is formed spaced apart from the source regions.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming a plurality of trenches extending into a semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches; disposing a trench fill material in the trenches, the trench fill material extending above the first main surface of the semiconductor material; forming sacrificial spacers on the semiconductor material adjacent opposing sides of the trench fill material; forming gate electrodes on the first main surface of the semiconductor material adjacent the sacrificial spacers, the gate electrodes having the same alignment with respect to the trenches, the gate electrodes defining lateral channel regions in the mesas under the gate electrodes; removing the sacrificial spacers after formation of the gate electrodes; forming source regions in a region of the mesas; and forming a drain region spaced apart from the source regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification