Semiconductor device with graded drift region
First Claim
1. A semiconductor device, comprising:
- a semiconductor layer that has a first surface and a second surface;
a drift region of a first conductivity type in the semiconductor layer;
a body region of a second conductivity type in the semiconductor layer between the drift region and the first surface;
a source region of the first conductivity type in the semiconductor layer between the body region and the first surface;
a first gate electrode;
a second gate electrode, the body region being between the first gate electrode and the second gate electrode;
a first gate insulating film between the first gate electrode and the body region;
a second gate insulating film between the second gate electrode and the body region;
a first field plate electrode between the second surface and the first gate electrode;
a second field plate electrode between the second surface and the second gate electrode;
a first field plate insulating film between the first field plate electrode and the drift region;
a second field plate insulating film between the second field plate electrode and the drift region;
a first region of the drift region having at least a portion between the first field plate electrode and the second field plate electrode;
a second region of the drift region between the first region and the body region, having an impurity concentration of the first conductivity type that is higher than an impurity concentration of the first conductivity type in the first region; and
a third region of the drift region between the second region and the body region, having an impurity concentration of the first conductivity type that is lower than the impurity concentration of the first conductivity type in the second region.
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Accused Products
Abstract
A semiconductor device includes a semiconductor layer that has a first surface and a second surface, a drift region of a first conductivity type in the semiconductor layer, a body region of a second conductivity type between the drift region and the first surface, a source region of first conductivity type, a first gate electrode, a second gate electrode with the body region interposed between the first gate electrode and the second gate electrode, first and second gate insulating films, a first field plate electrode between the second surface and the first gate electrode, a second field plate electrode between the second surface and the second gate electrode, a first region of the first conductivity type in the drift region, a second region between the first region and the body region, and a third region between the second region and the body region.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor layer that has a first surface and a second surface; a drift region of a first conductivity type in the semiconductor layer; a body region of a second conductivity type in the semiconductor layer between the drift region and the first surface; a source region of the first conductivity type in the semiconductor layer between the body region and the first surface; a first gate electrode; a second gate electrode, the body region being between the first gate electrode and the second gate electrode; a first gate insulating film between the first gate electrode and the body region; a second gate insulating film between the second gate electrode and the body region; a first field plate electrode between the second surface and the first gate electrode; a second field plate electrode between the second surface and the second gate electrode; a first field plate insulating film between the first field plate electrode and the drift region; a second field plate insulating film between the second field plate electrode and the drift region; a first region of the drift region having at least a portion between the first field plate electrode and the second field plate electrode; a second region of the drift region between the first region and the body region, having an impurity concentration of the first conductivity type that is higher than an impurity concentration of the first conductivity type in the first region; and a third region of the drift region between the second region and the body region, having an impurity concentration of the first conductivity type that is lower than the impurity concentration of the first conductivity type in the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
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a semiconductor layer having a first surface and a second surface; a drift region of a first conductivity type in the semiconductor layer; a body region of a second conductivity type in the semiconductor layer between the drift region and the first surface; a source region of the first conductivity type in the semiconductor layer between the body region and the first surface; a first gate electrode; a second gate electrode, the body region being between the first gate electrode and the second gate electrode; a first gate insulating film between the first gate electrode and the body region; a second gate insulating film between the second gate electrode and the body region; a first field plate electrode between the second surface and the first gate electrode; a second field plate electrode between the second surface and the second gate electrode; a first field plate insulating film between the first field plate electrode and the drift region; a second field plate insulating film between the second field plate electrode and the drift region; a first region of the drift region having at least a portion between the first field plate electrode and the second field plate electrode; a second region of the drift region between the first region and the body region, and having an impurity concentration of the first conductivity type that is higher than an impurity concentration of the first conductivity type in the first region; a third region of the drift region between the second region and the body region, and having an impurity concentration of the first conductivity type that is lower than the impurity concentration of the first conductivity type in the second region; a source electrode on the first surface and electrically coupled to the source region; a drain electrode on the second surface and electrically coupled to the drift region; and a drain region of the first conductivity type between the drift region and the drain electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a single crystal semiconductor layer that has a first surface and a second surface; a drift region of a first conductivity type in the semiconductor layer; a body region of a second conductivity type in the semiconductor layer between the drift region and the first surface; a source region of the first conductivity type in the semiconductor layer between the body region and the first surface; a first gate electrode; a second gate electrode, the body region being between the first gate electrode and the second gate electrode; a first gate insulating film between the first gate electrode and the body region; a second gate insulating film between the second gate electrode and the body region; a first field plate electrode between the second surface and the first gate electrode; a second field plate electrode between the second surface and the second gate electrode; a first field plate insulating film between the first field plate electrode and the drift region; a second field plate insulating film between the second field plate electrode and the drift region; a first region in the drift region having at least a portion between the first field plate electrode and the second field plate electrode; a second region in the drift region between the first region and the body region, and having an impurity concentration of the first conductivity type that is higher than an impurity concentration of the first conductivity type in the first region; a third region in the drift region between the second region and the body region, and having an impurity concentration of the first conductivity type that is lower than the impurity concentration of the first conductivity type in the second region; a source electrode on the first surface and electrically coupled to the source region; a drain electrode on the second surface and electrically coupled to the drift region; and a drain region of the first conductivity type between the drift region and the drain electrode. - View Dependent Claims (19, 20)
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Specification