Sapphire substrate having elongated projection and semiconductor light emitting device utilizing the same
First Claim
1. A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device, the sapphire substrate comprising:
- a plurality of elongated projections on the principal surface, the elongated projections being separated from one another with gaps therebetween,wherein each of the elongated projections is elongated in exactly one direction,wherein each of the elongated projections extends in a direction that is within a range of ±
10 degrees of a direction that is rotated clockwise or counter clockwise by 30 degrees from a crystal axis “
a”
of the sapphire substrate, andwherein a length of each of the elongated projections in the direction that is within a range of ±
10 degrees of a direction that is rotated clockwise or counter clockwise by 30 degrees from a crystal axis “
a”
of the sapphire substrate is greater than a length of each of the elongated projections in any other direction.
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Abstract
The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
23 Citations
7 Claims
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1. A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device, the sapphire substrate comprising:
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a plurality of elongated projections on the principal surface, the elongated projections being separated from one another with gaps therebetween, wherein each of the elongated projections is elongated in exactly one direction, wherein each of the elongated projections extends in a direction that is within a range of ±
10 degrees of a direction that is rotated clockwise or counter clockwise by 30 degrees from a crystal axis “
a”
of the sapphire substrate, andwherein a length of each of the elongated projections in the direction that is within a range of ±
10 degrees of a direction that is rotated clockwise or counter clockwise by 30 degrees from a crystal axis “
a”
of the sapphire substrate is greater than a length of each of the elongated projections in any other direction. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification