Nitride semiconductor element and method for manufacturing the same
First Claim
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1. A method of manufacturing a nitride semiconductor element, the method comprising:
- dry etching a main surface of a sapphire substrate at a c-plane side thereof, with a mask provided on the main surface, thus forming a plurality of projections, each projection having a circular bottom surface;
wet etching the sapphire substrate, thus forming an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of each projection; and
growing a semiconductor layer made of a nitride semiconductor on the sapphire substrate after said dry etching and wet etching.
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Abstract
A method of manufacturing a nitride semiconductor element includes dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface; wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection; and growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate.
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Citations
10 Claims
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1. A method of manufacturing a nitride semiconductor element, the method comprising:
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dry etching a main surface of a sapphire substrate at a c-plane side thereof, with a mask provided on the main surface, thus forming a plurality of projections, each projection having a circular bottom surface; wet etching the sapphire substrate, thus forming an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of each projection; and growing a semiconductor layer made of a nitride semiconductor on the sapphire substrate after said dry etching and wet etching. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a nitride semiconductor element, the method comprising:
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preparing a sapphire substrate with a plurality of projections formed on a surface of the sapphire substrate at a c-plane side thereof, each of the projections having a circular bottom surface and an upper part in a triangular pyramid shape, a ridge line of the triangular pyramid shape extending in a direction of an m-axis in a top view; and growing a semiconductor layer made of a nitride semiconductor on the surface of the sapphire substrate. - View Dependent Claims (6, 7, 8)
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9. A nitride semiconductor element comprising:
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a sapphire substrate with a plurality of projections disposed on a surface thereof at a c-plane side; and a semiconductor layer made of a nitride semiconductor and disposed on the surface of the sapphire substrate, wherein each projection has a circular bottom surface, and an upper part in a triangular pyramid shape, and each ridge line of the triangular pyramid shape extends in a direction of an m-axis in a top view. - View Dependent Claims (10)
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Specification