Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element

• US 9,525,127 B2
• Filed: 12/10/2014
• Issued: 12/20/2016
• Est. Priority Date: 09/17/2009
• Status: Active Grant

• Current Assignee: III Holdings 3, LLC
• Original Assignee: III Holdings 3, LLC
• Inventors: Yamada, Michiya, Ogimoto, Yasuchi
• Primary Examiner(s): NGUYEN, HIEN N
• Application Number:
  US14/565,447
• Publication Number:
  US 20150214471A1
• Time in Patent Office: 741 Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element.

A magnetoresistance element 1-1 includes a magnetic tunnel junction portion 13 configured by sequentially stacking a perpendicularly magnetized first magnetic body 22, an insulation layer 21, and a perpendicularly magnetized second magnetic body 200. The second magnetic body 200 has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer 21 side interface. A heat assist layer 28-1 that heats the second magnetic body 200 with a heat generated based on a current flowing through the magnetic tunnel junction portion 13 is further provided, and the magnetization direction of the second magnetic body 200 is reversed by the heating of the second magnetic body 200. A non-volatile semiconductor storage device 10-1 includes the magnetoresistance element 1-1, a switching element connected in series to the magnetoresistance element 1-1, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element 1-1, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element 1-1.

Claims

1. A magnetoresistance element comprising:

a lower electrode;

a pinned region above the lower electrode, wherein the pinned region includes a first magnetic region;

a storage region above the pinned region, wherein the storage region includes a second magnetic region;

an insulating region between the pinned region and the storage region;

an upper electrode above the storage region; and

a heat generation region between the upper electrode and the storage region;

wherein;

the storage region further includes a rare-earth metal alloy between the second magnetic region and the heat generation region; and

the heat generation region is configured to generate heat for transfer to the storage region when a current flows through the heat generation region.

2. The magnetoresistance element of claim 1, wherein the rare-earth metal alloy has a perpendicular magnetic anisotropic energy between 10⁵ erg/cc and 10⁶ erg/cc.

3. The magnetoresistance element of claim 1, wherein the rare-earth metal alloy comprises at least one of TbCo, GdCo, GdFeCo, or TbFeCo.

4. The magnetoresistance element of claim 1, wherein the heat generation region comprises a resistivity between 0.01 Ω

cm and 10 Ω

cm.

5. The magnetoresistance element of claim 1, wherein the heat generation region comprises a resistance of between 1 kΩ

and 50 kΩ

.

6. The magnetoresistance element of claim 1, further comprising an oxide region between the heat generation region and the storage region.

7. The magnetoresistance element of claim 1, wherein at least one of the first magnetic region or the second magnetic region comprise a magnetic body having a spin completely polarized with respect to a Δ

1 band.

8. A magnetoresistance element comprising:

a lower electrode;

a pinned region above the lower electrode, wherein the pinned region includes a first magnetic region;

a storage region above the pinned region, wherein the storage region includes a second magnetic region;

an insulating region between the pinned region and the storage region;

an upper electrode above the storage region; and

a heat generation region between the lower electrode and the pinned region;

wherein;

the pinned region further includes a rare-earth metal alloy between the first magnetic region and the heat generation region; and

the heat generation region is configured to generate heat for transfer to the pinned region when a current flows through the heat generation region.

9. The magnetoresistance element of claim 8, wherein the rare-earth metal alloy has a perpendicular magnetic anisotropic energy between 10⁵ erg/cc and 10⁶ erg/cc.

10. The magnetoresistance element of claim 8, wherein the rare-earth metal alloy comprises at least one of TbCo, GdCo, GdFeCo, or TbFeCo.

11. The magnetoresistance element of claim 8, wherein the heat generation region comprises a resistivity between 0.01 Ω

cm and 10 Ω

cm.

12. The magnetoresistance element of claim 8, wherein the heat generation region comprises a resistance of between 1 kΩ

and 50 kΩ

.

13. The magnetoresistance element of claim 8, further comprising an oxide region between the heat generation region and the pinned region.

14. The magnetoresistance element of claim 8, wherein at least one of the first magnetic region or the second magnetic region comprise a magnetic body having a spin completely polarized with respect to a Δ

1 band.