Method for processing a substrate and apparatus for performing the same

• US 9,529,267 B2
• Filed: 06/27/2013
• Issued: 12/27/2016
• Est. Priority Date: 06/30/2009
• Status: Active Grant

• Current Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Original Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Inventors: Rho, Eun-Su, Bae, Jeong-Yong
• Primary Examiner(s): GOLIGHTLY, ERIC WAYNE
• Application Number:
  US13/928,446
• Publication Number:
  US 20130284212A1
• Time in Patent Office: 1,279 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G03F 7/422 using liquids only G03F7/421 takes precedence
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles

Abstract

A method for processing a substrate includes arranging the substrate on which a photoresist layer is formed and providing a treatment liquid for removing the photoresist layer on the substrate. The method also includes providing a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid. Therefore, efficiency of removing the photoresist layer may be improved.

Claims

1. A method for processing a substrate, the method comprising:

arranging the substrate on which a photoresist layer is formed;

providing a treatment liquid for removing the photoresist layer on the substrate; and

providing a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid such that the mist and the treatment liquid react with each other so as to increase a temperature of the treatment liquid, and to generate a radical hydroxide which reacts with the photoresist layer to substantially remove the photoresist layer from the substrate, wherein the treatment liquid and the mist make contact with each other before provided on the substrate.

2. The method of claim 1, wherein the mist is formed by ultrasonic waves.

3. The method of claim 1, wherein a temperature of the mist is between about 10°

C. and about 99.9°

C.

4. The method of claim 1, wherein a particle size of the mist is between about 1 nm and about 100000 nm.

5. The method of claim 1, wherein the mist is provided on the substrate using a carrier gas.

6. The method of claim 1, wherein the treatment liquid and the mist are injected at the same time.

7. The method of claim 1, wherein the substrate spins, and the mist is provided in front of a position of the substrate at which the treatment liquid is provided.

8. The method of claim 1, wherein the treatment liquid includes one of SOM (Sulfuric Acid/Ozone), SC-1 (NH4OH/Peroxide/Water), SC-2 (HCI/Peroxide/Water) and BOE (Buffered Oxide Etch:

HF/NH4F).

9. The method of claim 1, wherein the mist and the treatment liquid exothermically react with each other.

10. The method of claim 2, wherein the ultrasonic waves have a frequency of several kHz.

11. The method of claim 5, wherein a temperature of the carrier gas is substantially maintained between about 20°

C. and about 99.9°

C.

12. The method of claim 5, wherein a flow of the mist provided on the substrate is controlled by controlling a flow of the carrier gas.

13. The method of claim 1, wherein a temperature of the mist is about 10°

C.

14. The method of claim 1, wherein a temperature of the mist is about 99.9°

C.

15. The method of claim 1, wherein the mist does not include hydrogen peroxide.