Integrated induction coil and microwave antenna as an all-planar source

• US 9,530,621 B2
• Filed: 05/28/2014
• Issued: 12/27/2016
• Est. Priority Date: 05/28/2014
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ventzek, Peter L. G., Chen, Lee
• Primary Examiner(s): DHINGRA, RAKESH KUMAR
• Application Number:
  US14/288,572
• Publication Number:
  US 20150348756A1
• Time in Patent Office: 944 Days
• Field of Search: 156/345.41, 156/345.48, 156/345.49, 118/723.MW, 118/723.AN, 118/723.I, 118/723.IR
• US Class Current: 1/1
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32229 Waveguides

Abstract

This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (ICP) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an ICP coil for a radio frequency (RF) power source and as a slot antenna for a microwave source.

Claims

1. A plasma processing device for a substrate, comprising:

a plasma processing chamber;

a substrate holder disposed in the plasma processing chamber and configured to receive the substrate;

a microwave power supply configured to generate microwave energy;

a radio frequency (RF) power supply configured to generate RF energy; and

a slot antenna comprising;

(i) a first dielectric component formed in a first slot opening of the slot antenna, the first dielectric component coupled to the microwave power supply and configured to transmit the microwave energy,

(ii) a second dielectric component formed in a second slot opening of the slot antenna, and

(iii) a metal layer disposed between the first dielectric component and the second dielectric component and wherein the metal layer is coupled to the radio frequency power supply so that the radio frequency power supply supplies radio frequency power to the metal layer;

wherein the metal layer comprises a pattern that enables the transmission of the microwave energy from the first dielectric component to the second dielectric component, and

wherein the pattern comprises a continuous low impedance path starting proximate to the edge of the slot antenna and ending proximate to a center region of the slot antenna and the first slot and the second slot form contours along the low impedance path starting proximate to the edge of the slot antenna and ending proximate to a center region of the slot antenna.

2. The device of claim 1, wherein the continuous path comprises a spiral.

3. The device of claim 2, further comprising a ground proximate to the center of the slot antenna or at an outer edge of the slot antenna.

4. The device of claim 3, wherein the first dielectric component comprises quartz or ceramic comprising a thickness that is proportional to no more than a ¼

wavelength of the power provided by the microwave power supply.

5. The device of claim 1, where in the metal layer comprises a thickness less than or equal to 1 mm.

6. The device of claim 5, wherein the second dielectric component comprises quartz or ceramic comprising a thickness ranging from ¼

to ½

wavelength of the power provided by the microwave power supply.

7. The device of claim 1, wherein the metal layer is configured to transmit the RF energy in an azimuthal direction and the second dielectric component is configured to transmit the microwave energy and the RF energy.

8. The device of claim 1, wherein the metal layer pattern comprises a spiral shape starting proximate to an edge of the slot antenna and ending proximate to a center region of the slot antenna.

9. The device of claim 1, wherein the metal layer comprises a metal layer pattern on a surface of the first dielectric component and the second dielectric component.

10. A slot antenna for generating plasma for treating a semiconductor substrate, comprising:

a first dielectric component formed in a first slot opening of the slot antenna, the first dielectric component coupled to a microwave power supply and configured to transmit microwave energy to generate the plasma for treating the semiconductor substrate;

a second dielectric component formed in a second slot opening of the slot antenna, the second dielectric component opposite from the first dielectric component; and

a metal layer on a surface of the first dielectric component or the second dielectric component, the metal layer coupled to a radio frequency power supply,

wherein the metal layer comprises a pattern that enables the transmission of the microwave energy from the first dielectric component to the second dielectric component, and

wherein the pattern comprises a continuous low impedance path starting proximate to the edge of the slot antenna and ending proximate to a center region of the slot antenna and the first slot and the second slot form contours along the low impedance path starting proximate to the edge of the slot antenna and ending proximate to a center region of the slot antenna.