Display device

• US 9,530,804 B2
• Filed: 10/20/2014
• Issued: 12/27/2016
• Est. Priority Date: 10/22/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kubota, Daisuke
• Primary Examiner(s): Lee, Paul
• Assistant Examiner(s): PAN, JIA X
• Application Number:
  US14/517,986
• Publication Number:
  US 20150109553A1
• Time in Patent Office: 799 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A display device with excellent display quality is provided. The display device includes a transistor over a first substrate, an inorganic insulating film in contact with the transistor, and an organic insulating film in contact with the inorganic insulating film. The transistor includes a gate electrode over the first substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. The inorganic insulating film is in contact with the other surface of the oxide semiconductor film. The organic insulating film overlaps with the oxide semiconductor film with the inorganic insulating film provided therebetween and is separated. Note that the thickness of the organic insulating film is preferably greater than or equal to 500 nm and less than or equal to 10 μm.

Claims

1. A display device comprising:

a transistor over a first substrate;

an inorganic insulating film over the transistor;

an organic insulating film on and in contact with the inorganic insulating film; and

a pixel electrode on and in contact with the inorganic insulating film, the pixel electrode electrically connected to the transistor,

wherein the transistor comprises;

a gate electrode over the first substrate;

an oxide semiconductor film over the gate electrode; and

a gate insulating film between the gate electrode and the oxide semiconductor film,

wherein an upper surface of the oxide semiconductor film is in contact with the inorganic insulating film,

wherein the organic insulating film overlaps with the oxide semiconductor film with the inorganic insulating film provided therebetween, and

wherein an end portion of the gate electrode is positioned on an outer side of an end portion of the organic insulating film.

2. The display device according to claim 1, further comprising:

a second substrate overlapping with the first substrate; and

a liquid crystal layer between the organic insulating film and the second substrate,

wherein the transistor and the organic insulating film are provided between the first substrate and the second substrate.

3. The display device according to claim 1, further comprising:

a second substrate overlapping with the first substrate; and

a liquid crystal layer between the pixel electrode and the second substrate,

wherein the transistor and the organic insulating film are provided between the first substrate and the second substrate, and

wherein the liquid crystal layer is not provided between the organic insulating film and the second substrate.

4. The display device according to claim 1,

wherein a thickness of the organic insulating film is greater than or equal to 500 nm and less than or equal to 10 μ

m.

5. The display device according to claim 1,

wherein the inorganic insulating film comprises an oxide insulating film in contact with the upper surface of the oxide semiconductor film and a nitride insulating film on and in contact with the oxide insulating film.

6. The display device according to claim 1,

wherein, in a plan view, the organic insulating film completely overlaps with the oxide semiconductor film.

7. A display device comprising:

a transistor over a first substrate;

an inorganic insulating film over the transistor;

an organic insulating film on and in contact with the inorganic insulating film;

a pixel electrode electrically connected to the transistor; and

a capacitor electrically connected to the transistor,

wherein the transistor comprises;

a gate electrode over the first substrate;

an oxide semiconductor film over the gate electrode; and

a gate insulating film between the gate electrode and the oxide semiconductor film,

wherein an upper surface of the oxide semiconductor film is in contact with the inorganic insulating film,

wherein the organic insulating film overlaps with the oxide semiconductor film with the inorganic insulating film provided therebetween,

wherein an end portion of the gate electrode is positioned on an outer side of an end portion of the organic insulating film,

wherein the capacitor comprises the pixel electrode, the inorganic insulating film and a metal oxide film,

wherein the pixel electrode comprises a light-transmitting conductive material and the pixel electrode overlaps with the metal oxide film with the inorganic insulating film provided therebetween, and

wherein the metal oxide film contains the same metal element as the oxide semiconductor film and an upper surface of the metal oxide film is in contact with the inorganic insulating film.

8. The display device according to claim 7, further comprising:

a second substrate overlapping with the first substrate; and

a liquid crystal layer between the organic insulating film and the second substrate,

wherein the transistor and the organic insulating film are provided between the first substrate and the second substrate.

9. The display device according to claim 7, further comprising:

a second substrate overlapping with the first substrate; and

a liquid crystal layer between the pixel electrode and the second substrate,

wherein the transistor and the organic insulating film are provided between the first substrate and the second substrate, and

wherein the liquid crystal layer is not provided between the organic insulating film and the second substrate.

10. The display device according to claim 7, wherein a thickness of the organic insulating film is greater than or equal to 500 nm and less than or equal to 10 μ

m.

11. The display device according to claim 7,

wherein the inorganic insulating film comprises an oxide insulating film in contact with the upper surface of the oxide semiconductor film and a nitride insulating film on and in contact with the oxide insulating film.

12. The display device according to claim 7,

wherein, in a plan view, the organic insulating film completely overlaps with the oxide semiconductor film.

13. The display device according to claim 7, further comprising,

a pair of electrodes in contact with the oxide semiconductor film,

wherein one of the pair of electrodes electrically connected to the pixel electrode.

14. A display device comprising:

a transistor over a first substrate;

an inorganic insulating film over the transistor;

an organic insulating film on and in contact with the inorganic insulating film;

a pixel electrode electrically connected to the transistor;

a capacitor electrically connected to the transistor,

wherein the transistor comprises;

a gate electrode over the first substrate;

an oxide semiconductor film over the gate electrode; and

a gate insulating film between the gate electrode and the oxide semiconductor film,

wherein an upper surface of the oxide semiconductor film is in contact with the inorganic insulating film,

wherein the organic insulating film overlaps with the oxide semiconductor film with the inorganic insulating film provided therebetween,

wherein an end portion of the gate electrode is positioned on an outer side of an end portion of the organic insulating film,

wherein the capacitor comprises the pixel electrode, the inorganic insulating film and a light-transmitting conductive film,

wherein the pixel electrode is provided over the gate insulating film and contains the same metal element as the oxide semiconductor film, and

wherein the light-transmitting conductive film overlaps with the pixel electrode with the inorganic insulating film provided therebetween and the light-transmitting conductive film functions as a common electrode.

15. The display device according to claim 14, further comprising:

a second substrate overlapping with the first substrate; and

a liquid crystal layer between the organic insulating film and the second substrate,

wherein the transistor and the organic insulating film are provided between the first substrate and the second substrate.

16. The display device according to claim 14, further comprising:

a second substrate overlapping with the first substrate; and

a liquid crystal layer between the pixel electrode and the second substrate,

wherein the transistor and the organic insulating film are provided between the first substrate and the second substrate, and

wherein the liquid crystal layer is not provided between the organic insulating film and the second substrate.

17. The display device according to claim 14 wherein a thickness of the organic insulating film is greater than or equal to 500 nm and less than or equal to 10 μ

m.

18. The display device according to claim 14,

wherein the inorganic insulating film comprises an oxide insulating film in contact with the upper surface of the oxide semiconductor film and a nitride insulating film on and in contact with the oxide insulating film.

19. The display device according to claim 14,

wherein, in a plan view, the organic insulating film completely overlaps with the oxide semiconductor film.

20. The display device according to claim 14, further comprising,

a pair of electrodes in contact with the oxide semiconductor film,

wherein one of the pair of electrodes electrically connected to the pixel electrode.