Semiconductor device with field electrode and field dielectric
First Claim
1. A semiconductor device, comprising:
- a field electrode structure comprising a field electrode and a field dielectric, wherein the field dielectric is positioned between the field electrode and a drift zone section, and wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and
a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, the drift zone section and a body zone separating the source zone and the drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the drift zone section;
wherein the field dielectric further comprises a third dielectric layer, and wherein the second dielectric layer is sandwiched between the first dielectric layer and the third dielectric layer;
a gate structure comprising a gate electrode and a gate dielectric separating the gate electrode and the body zone, wherein the gate structure surrounds the field electrode structure;
wherein the transistor section is sandwiched between the field electrode structure and the gate structure in a horizontal plane parallel to a first surface of the semiconductor body.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a field electrode structure that includes a field electrode and a field dielectric surrounding the field electrode. The field dielectric includes a first dielectric layer and a second dielectric layer having a smaller band gap and/or a lower conduction band edge than the first dielectric layer. A semiconductor body includes a transistor section that surrounds the field electrode structure and directly adjoins the first dielectric layer. The transistor section includes a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. The body zone forms a first pn junction with the source zone and a second pn junction with the first drift zone section.
-
Citations
16 Claims
-
1. A semiconductor device, comprising:
-
a field electrode structure comprising a field electrode and a field dielectric, wherein the field dielectric is positioned between the field electrode and a drift zone section, and wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, the drift zone section and a body zone separating the source zone and the drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the drift zone section; wherein the field dielectric further comprises a third dielectric layer, and wherein the second dielectric layer is sandwiched between the first dielectric layer and the third dielectric layer; a gate structure comprising a gate electrode and a gate dielectric separating the gate electrode and the body zone, wherein the gate structure surrounds the field electrode structure; wherein the transistor section is sandwiched between the field electrode structure and the gate structure in a horizontal plane parallel to a first surface of the semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A semiconductor device, comprising:
-
a field electrode structure comprising a field electrode and a field dielectric, wherein the field dielectric is positioned between the field electrode and a drift zone section, and wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, the drift zone section and a body zone separating the source zone and the drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the drift zone section; wherein the field dielectric further comprises a third dielectric layer, and wherein the second dielectric layer is sandwiched between the first dielectric layer and the third dielectric layer; wherein the second dielectric layer is formed at most in the lower third of the vertical extension of the field electrode structure.
-
-
16. A semiconductor device, comprising:
-
a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode, wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, a drift zone section and a body zone separating the source zone and the drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the drift zone section; and a gate electrode formed between the field electrode and the transistor section, wherein a top edge of the gate electrode and a top edge of the field electrode are in a horizontal plane parallel to a first surface of the semiconductor body.
-
Specification