Semiconductor device and method for manufacturing the same

• US 9,530,856 B2
• Filed: 12/22/2014
• Issued: 12/27/2016
• Est. Priority Date: 12/26/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyairi, Hidekazu
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US14/578,862
• Publication Number:
  US 20150187898A1
• Time in Patent Office: 736 Days
• Field of Search: 257/43, 257/59, 257/288, 257/329, 257/410, 257/762, 257/E29.068, 257/E29.255, 257/E29.266, 257/E29.296, 257/E21.078, 257/E21.409, 257/E21.444, 438/104, 438/270, 438/305, 438/396, 438/586
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/4958 with a multiple layer structure
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A novel semiconductor device with a transistor using an oxide semiconductor film, in which a conductive film including Cu is used as a wiring or the like, is provided. The semiconductor device includes a first insulating film, an oxide semiconductor over the first insulating film, a gate electrode overlapping the oxide semiconductor with a gate insulating film positioned therebetween, a second insulating film in contact with a side surface of the gate electrode, and a third insulating film in contact with a top surface of the gate electrode. The gate electrode includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, Ti, Zr, Mg, Ca, or a mixture of two or more of these elements).

Claims

1. A semiconductor device comprising:

a substrate;

a first insulating film over the substrate, the first insulating film comprising a first opening;

a second insulating film covering part of the first insulating film, the second insulating film comprising a second opening including the first opening;

a first conductive film in the first opening, the first conductive film comprising a Cu—

X alloy, where X is Mn, Ni, Cr, Fe, Co, Mo, Ta, Ti, Zr, Mg, Ca, or a mixture of two or more of these elements; and

a second conductive film over the first conductive film and in the first opening, the second conductive film comprising Cu,

wherein the first insulating film is interposed between the second insulating film and a side surface of the first conductive film,

wherein the first conductive film is interposed between the second conductive film and a side surface of the first insulating film, and

wherein each of the first insulating film, the second insulating film, the first conductive film, and the second conductive film comprises a horizontal top surface, all of the horizontal top surfaces being on a same level.

2. The semiconductor device according to claim 1, further comprising a film over the substrate,

wherein the first insulating film and the first conductive film each are on and in contact with a top surface of the film.

3. The semiconductor device according to claim 1,

wherein the first conductive film and the second conductive film are in direct contact.

4. The semiconductor device according to claim 1,

wherein the first insulating film comprises oxygen,

wherein the first conductive film is in direct contact with the first insulating film, and

wherein an oxide of X is formed at an interface of the first conductive film with the first insulating film.

5. A semiconductor device comprising:

a substrate;

a first base film over the substrate;

a second base film over the first base film;

an oxide semiconductor over the second base film;

a gate insulating film over the oxide semiconductor;

a first insulating film over the gate insulating film, the first insulating film comprising a first opening, and the first insulating film comprising oxygen;

a second insulating film covering part of the first insulating film, the second insulating film comprising a second opening including the first opening; and

a gate electrode comprising;

a first conductive film in the first opening, the first conductive film comprising a Cu—

X alloy, where X is Mn, Ni, Cr, Fe, Co, Mo, Ta, Ti, Zr, Mg, Ca, or a mixture of two or more of these elements; and

a second conductive film over the first conductive film and in the first opening, the second conductive film comprising Cu;

wherein the first insulating film is interposed between the second insulating film and a side surface of the first conductive film,

wherein the first conductive film is interposed between the second conductive film and a side surface of the first insulating film,

wherein the first conductive film is in direct contact with the first insulating film,

wherein an oxide of X is formed at an interface of the first conductive film with the first insulating film, and

wherein each of the first insulating film, the second insulating film, the first conductive film, and the second conductive film comprises a horizontal top surface, all of the horizontal top surfaces being on a same level.

6. The semiconductor device according to claim 5,

wherein the first insulating film and the first conductive film each are on and in contact with a top surface of the gate insulating film.

7. The semiconductor device according to claim 5,

wherein the first conductive film and the second conductive film are in direct contact.

8. The semiconductor device according to claim 5,

wherein the first insulating film is in direct contact with a side surface of the gate insulating film.

9. The semiconductor device according to claim 5,

wherein the first base film and the first insulating film each have a function of blocking hydrogen and oxygen.

10. The semiconductor device according to claim 5,

wherein, except for a source and a drain electrical contacts, the oxide semiconductor is entirely surrounded by the second base film and the gate insulating film.

11. The semiconductor device according to claim 5,

wherein, except for a source and a drain electrical contacts, the oxide semiconductor is entirely surrounded by the second base film, the gate insulating film, and the first insulating film.

12. The semiconductor device according to claim 5, further comprising a source electrode and a drain electrode each in electrical contact with the oxide semiconductor,

wherein the source electrode and the gate electrode are interposed between the gate electrode and the oxide semiconductor.

13. A method for manufacturing a semiconductor device, comprising the steps of:

forming a sacrificial layer over a substrate;

forming a first insulating film over the sacrificial layer;

forming a second insulating film over the first insulating film;

removing a top part of the first insulating film, a top part of the second insulating film, and a top part of the sacrificial layer to expose a top surface of the sacrificial layer;

removing the sacrificial layer whose top surface is exposed;

forming a first conductive film over the first insulating film and the second insulating film, the first conductive film comprising a Cu—

X alloy, where X is Mn, Ni, Cr, Fe, Co, Mo, Ta, Ti, Zr, Mg, Ca, or a mixture of two or more of these elements;

forming a second conductive film over the first conductive film, the second conductive film comprising Cu; and

removing a top part of the first conductive film and a top part of the second conductive film so that a top surface of the first conductive film and a top surface of the second conductive film are on the same level and that a top surface of the second insulating film is exposed.

14. The method for manufacturing a semiconductor device according to claim 13,

wherein a chemical mechanical polishing method is used for the removal of the top parts of the first insulating film, the second insulating film, the first conductive film, and the second conductive film.

15. The method for manufacturing a semiconductor device according to claim 13, further comprising the steps of:

forming a first base film over the substrate;

forming a second base film over the first base film;

forming an oxide semiconductor over the second base film; and

forming a gate insulating film over the oxide semiconductor;

wherein the sacrificial layer is formed on the gate insulating film.

16. The method for manufacturing a semiconductor device according to claim 15, further comprising the step of:

patterning the oxide semiconductor and the gate insulating film with the use of the sacrificial layer as a mask.

17. The method for manufacturing a semiconductor device according to claim 13,

wherein the first insulating film comprises oxygen,

wherein the first conductive film is in direct contact with the first insulating film, and

wherein an oxide of X is formed at an interface of the first conductive film with the first insulating film.