Semiconductor device

• US 9,530,874 B2
• Filed: 03/02/2015
• Issued: 12/27/2016
• Est. Priority Date: 09/05/2014
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kitagawa, Mitsuhiko
• Primary Examiner(s): Tran, Dzung
• Application Number:
  US14/635,946
• Publication Number:
  US 20160071964A1
• Time in Patent Office: 666 Days
• Field of Search: 257/77, 257/132, 257/330, 257/340, 257/342, 257/E29.21, 257/126, 257/146, 257/E21.7, 257/135, 257/E21.41, 257/168, 257/487, 257/355, 257/41, 257/493, 257/E21.21, 438/138, 438/270, 438/133
• US Class Current: 1/1
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0834 Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

A semiconductor device includes a first semiconductor region of a second conductivity type, and a second semiconductor region of a first conductivity type. A third semiconductor region of a first conductivity type is selectively provided on the second semiconductor region. A fourth semiconductor region of the first conductivity type and a fifth semiconductor region of the second conductivity type are selectively provided on the third semiconductor region. A first electrode is provided on a second insulating film within the second semiconductor region. A second electrode is in contact with the fifth semiconductor region and the third semiconductor region. The sixth semiconductor region is provided on the second semiconductor region at least in a portion thereon other than the area where the third semiconductor region is provided. The sixth semiconductor region is not in contact with the second electrode.

Claims

1. A semiconductor device comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type provided over the first semiconductor region;

a third semiconductor region of the first conductivity type selectively provided on the second semiconductor region;

a fourth semiconductor region of the second conductivity type selectively provided on the third semiconductor region;

a fifth semiconductor region of the first conductivity type selectively provided on the third semiconductor region;

a gate electrode disposed adjacent to the third semiconductor region with a first insulating film therebetween;

a first electrode extending inwardly of the second semiconductor region with a second insulating film therebetween, a portion of the second semiconductor region positioned between the gate electrode and the first electrode;

a second electrode that extends into the second semiconductor region in contact with the fifth semiconductor region and the fourth semiconductor region; and

a sixth semiconductor region of the first conductivity type extending inwardly of the second semiconductor region in at least a part of an area where the third semiconductor region is not provided, and not in contact with the second electrode.

2. The semiconductor device according to claim 1, wherein

a plurality of gate electrodes are provided,

the first electrode is provided between two adjacent gate electrodes, and

the sixth semiconductor region extends between two gate electrodes, one of which is also a gate electrode where the first electrode is provided between two gate electrodes.

3. The semiconductor device according to claim 1, wherein

a plurality of the first electrodes are provided,

the gate electrode is provided between two of the plurality of first electrodes, and

the sixth semiconductor region is located adjacent to one of the two of the plurality of first electrodes.

4. The semiconductor device according to claim 1, wherein

a portion of the second electrode is located adjacent to the third semiconductor region and is at least partially surrounded by the second insulating film.

5. The semiconductor device according to claim 1, further comprising:

a plurality of semiconductor regions of the second conductivity type selectively provided under the second semiconductor region, wherein

a plurality of the first semiconductor regions are provided under the second semiconductor region, and

each of the plurality of semiconductor regions is provided between adjacent first semiconductor regions.

6. The semiconductor device according to claim 5, wherein

the gate electrode extends in a first direction,

the plurality of the first semiconductor regions and plurality of semiconductor regions extend in a second direction which crosses the first direction.

7. The semiconductor device according to claim 6, wherein the first direction is orthogonal to the second direction.

8. The semiconductor device according to claim 6, wherein

the first semiconductor regions and the plurality of semiconductor regions extend in a direction orthogonal to the extending direction of the second semiconductor region.

9. A semiconductor device comprising:

a first semiconductor region of a first conductivity type extending in a first direction;

a second semiconductor region of a second conductivity type extending in a second direction that is different than the first direction;

a third semiconductor region of the first conductivity type selectively provided on the second semiconductor region and extending in the first direction;

a fourth semiconductor region of the second conductivity type selectively provided on the third semiconductor region and extending in the first direction;

a fifth semiconductor region of the first conductivity type selectively provided on the third semiconductor region and extending in the first direction;

a gate electrode disposed adjacent to the third semiconductor region with a first insulating film therebetween;

a first electrode extending inwardly of the second semiconductor region with a second insulating film therebetween, a portion of the second semiconductor region positioned between the gate electrode and the first electrode;

a second electrode in contact with the fifth semiconductor region and the fourth semiconductor region; and

a sixth semiconductor region of the first conductivity type extending inwardly of the second semiconductor region in at least a part of an area where the third semiconductor region is not provided, and not in contact with the second electrode.

10. The semiconductor device according to claim 9, further comprising:

a plurality of gate electrodes, wherein the first electrode is provided between two adjacent gate electrodes of the plurality of gate electrodes.

11. The semiconductor device according to claim 10, wherein

the sixth semiconductor region extends between two gate electrodes of the plurality of gate electrodes.

12. The semiconductor device according to claim 9, wherein

a portion of the second electrode is located adjacent to the third semiconductor region and is at least partially surrounded by the second insulating film.

13. The semiconductor device according to claim 9, further comprising:

a plurality of semiconductor regions of the second conductivity type selectively provided under the second semiconductor region, wherein

a plurality of the first semiconductor regions are provided adjacent to the second semiconductor region, and

each of the plurality of semiconductor regions is provided between adjacent first semiconductor regions.

14. The semiconductor device according to claim 13, wherein

the gate electrode extends in the first direction,

the plurality of the first semiconductor regions and plurality of semiconductor regions extend in the second direction.

15. The semiconductor device according to claim 14, wherein the first direction is orthogonal to the second direction.

16. The semiconductor device according to claim 14, wherein

the first semiconductor regions and the plurality of semiconductor regions extend in a direction orthogonal to the extending direction of the second semiconductor region.

17. A semiconductor device comprising:

a first semiconductor region of a first conductivity type extending in a first direction;

a second semiconductor region of a second conductivity type extending in a second direction that is different than the first direction;

a third semiconductor region of the first conductivity type selectively provided on the second semiconductor region and extending in the first direction;

a fourth semiconductor region of the second conductivity type selectively provided on the third semiconductor region and extending in the first direction;

a fifth semiconductor region of the first conductivity type selectively provided on the third semiconductor region;

a gate electrode disposed adjacent to the third semiconductor region with a first insulating film therebetween;

a first electrode extending inwardly of the second semiconductor region with a second insulating film therebetween, a portion of the second semiconductor region positioned between the gate electrode and the first electrode;

a second electrode in contact with the fifth semiconductor region and the fourth semiconductor region, the second electrode extending at least partially into the second semiconductor region; and

a sixth semiconductor region of the first conductivity type extending inwardly of the second semiconductor region in at least a part of an area where the third semiconductor region is not provided, and not in contact with the second electrode.

18. The semiconductor device according to claim 17, further comprising:

a plurality of gate electrodes, and the first electrode is provided between two adjacent gate electrodes of the plurality of gate electrodes.

19. The semiconductor device according to claim 18, wherein

the sixth semiconductor region extends between two gate electrodes of the plurality of gate electrodes.

20. The semiconductor device according to claim 17, wherein

a portion of the second electrode is located adjacent to the third semiconductor region and is at least partially surrounded by the second insulating film.