Light emitting diode having vertical topology and method of making the same
First Claim
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1. A light emitting device, comprising:
- a supporting layer;
a semiconductor structure on the supporting layer, the semiconductor structure comprising a first surface, a second surface opposite the first surface, and an inclined side surface with reference to the first surface;
a light-extraction structure that is part of the second surface of the semiconductor structure;
a passivation layer around the semiconductor structure;
a connection metal layer between the supporting layer and the first surface of the semiconductor structure and between the supporting layer and the passivation layer, a width of the connection metal layer in a width direction perpendicular to a thickness direction of the supporting layer being wider than a width of the light-extraction structure in the width direction;
a first electrode between the connection metal layer and the first surface of the semiconductor structure, wherein the first electrode comprises;
a reflective electrode; and
an ohmic electrode on the reflective electrode; and
a second electrode on the second surface of the semiconductor structure.
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Abstract
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
28 Citations
20 Claims
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1. A light emitting device, comprising:
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a supporting layer; a semiconductor structure on the supporting layer, the semiconductor structure comprising a first surface, a second surface opposite the first surface, and an inclined side surface with reference to the first surface; a light-extraction structure that is part of the second surface of the semiconductor structure; a passivation layer around the semiconductor structure; a connection metal layer between the supporting layer and the first surface of the semiconductor structure and between the supporting layer and the passivation layer, a width of the connection metal layer in a width direction perpendicular to a thickness direction of the supporting layer being wider than a width of the light-extraction structure in the width direction; a first electrode between the connection metal layer and the first surface of the semiconductor structure, wherein the first electrode comprises; a reflective electrode; and an ohmic electrode on the reflective electrode; and a second electrode on the second surface of the semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification