Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module

• US 9,530,939 B2
• Filed: 06/02/2016
• Issued: 12/27/2016
• Est. Priority Date: 06/28/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US15/171,431
• Publication Number:
  US 20160276542A1
• Time in Patent Office: 208 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a reflection pattern disposed on a portion of the second semiconductor layer, and a first insulating layer including a first portion having a first thickness and a second portion having a second thickness different from the first thickness, in which the first portion is disposed on the reflection pattern or the first semiconductor layer and the second portion is disposed on the second semiconductor layer.

Claims

1. A light emitting diode (LED), comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

an active layer disposed on a portion of the first semiconductor layer;

a second semiconductor layer disposed on the active layer;

a reflection pattern disposed on a portion of the second semiconductor layer; and

a first insulating layer comprising a first portion having a first thickness and a second portion having a second thickness different from the first thickness,

wherein;

the first portion is disposed on the reflection pattern; and

the second portion is disposed on the second semiconductor layer.

2. The LED of claim 1, wherein the second thickness is greater than the first thickness.

3. The LED of claim 1, wherein the first insulating layer has a first opening exposing the reflection pattern.

4. The LED of claim 1, wherein:

the first semiconductor layer supports a number of upper layers; and

a trench or a hole is formed in the upper layers and extends to the first semiconductor layer.

5. The LED of claim 1, further comprising:

a second insulating layer disposed over the first insulating layer; and

a conductive metal layer disposed between the first insulating layer and the second insulating layer,

wherein the conductive metal layer is electrically connected to the first semiconductor layer, and has an opening exposing a portion of the reflection pattern through an opening of the first insulating layer.

6. The LED of claim 2, wherein the reflection pattern further comprises:

a reflective metal layer;

a conductive barrier layer disposed on the reflective metal layer;

an ohmic contact layer disposed between the second semiconductor layer and the reflective metal layer; and

a stress relaxation layer disposed between the reflective metal layer and the conductive barrier layer.

7. The LED of claim 2, wherein:

the first insulating layer further comprises a third portion having a third thickness disposed on the first semiconductor layer; and

the third thickness is substantially the same as the first thickness of the first portion.

8. The LED of claim 7, wherein:

the second portion of the first semiconductor layer does not overlap the reflection pattern; and

the third portion of the first semiconductor layer does not overlap the second semiconductor layer.

9. The LED of claim 3, wherein the first insulating layer further has a second opening exposing the first semiconductor layer.

10. The LED of claim 8, further comprising:

a first pad and a second pad spaced apart from each other,

wherein the first and second pads are electrically connected to the conductive metal layer and the reflection pattern, respectively.

11. A light emitting diode (LED), comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

an active layer disposed on a portion of the first semiconductor layer;

a second semiconductor layer disposed on the active layer;

a reflection pattern disposed on a portion of the second semiconductor layer; and

a first insulating layer comprising a first portion having a first thickness and a second portion having a second thickness different from the first thickness,

wherein;

the first portion is disposed on the second semiconductor layer; and

the second portion is disposed on the first semiconductor layer.

12. The LED of claim 11, wherein the first thickness is greater than the second thickness.

13. The LED of claim 11, wherein the reflection pattern comprises:

a reflective metal layer; and

a conductive barrier layer disposed on the reflective metal layer.

14. The LED of claim 11, wherein:

the second portion of the first insulating layer has an opening exposing the first semiconductor layer; and

the first insulating layer has an opening exposing the reflection pattern.

15. The LED of claim 11, wherein:

the first semiconductor layer supports a number of upper layers; and

a trench or a hole is formed in the upper layers and extends to the first semiconductor layer.

16. The LED of claim 11, further comprising:

a second insulating layer disposed over the first insulating layer;

a conductive metal layer disposed between the first insulating layer and the second insulating layer;

a first pad electrically connected to the conductive metal layer; and

a second pad spaced apart from the first pad and electrically connected to the reflection pattern,

wherein the conductive metal layer is electrically connected to the first semiconductor layer, and has an opening exposing a portion of the reflection pattern through an opening of the first insulating layer.

17. The LED of claim 12, wherein:

the first insulating layer further comprises a third portion having a third thickness disposed on the reflection pattern; and

the first thickness is greater than the third thickness.

18. The LED of claim 12, wherein:

the first portion of the first insulating layer does not overlap the reflection pattern; and

the second portion of the first insulating layer does not overlap the second semiconductor layer.

19. The LED of claim 17, where the second thickness is substantially the same as the first thickness.

20. The LED of claim 13, wherein the reflection pattern further comprises:

an ohmic contact layer disposed between the second semiconductor layer and the reflective metal layer; and

a stress relaxation layer disposed between the reflective metal layer and the conductive barrier layer.