Light-emitting device with high light extraction
First Claim
1. A light-emitting device comprising:
- a light-emitting stacked layer comprising a first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities such that an upper surface of the second conductivity type semiconductor layer is a textured surface;
a first planarization layer formed on a first part of the second conductivity type semiconductor layer;
a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer;
a first electrode formed on the first portion of the first transparent conductive oxide layer; and
a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
1 Assignment
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Accused Products
Abstract
A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
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Citations
19 Claims
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1. A light-emitting device comprising:
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a light-emitting stacked layer comprising a first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities such that an upper surface of the second conductivity type semiconductor layer is a textured surface;a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion of the first transparent conductive oxide layer; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light-emitting device comprising:
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a light-emitting stacked layer comprising a first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities such that an upper surface of the second conductivity type semiconductor layer is a textured surface;a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer, wherein the first transparent conductive oxide layer further has a secondary branch not covered by the first electrode and extending toward an end of the light emitting device. - View Dependent Claims (13)
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14. A light-emitting device comprising:
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a light-emitting stacked layer comprising a first conductivity type semiconductor layer comprising a third plurality of cavities such that an upper surface of the first conductivity type semiconductor layer is a textured surface;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities such that an upper surface of the second conductivity type semiconductor layer is a textured surface;a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the second conductivity type semiconductor layer; a first electrode formed on the first portion of the first transparent conductive oxide layer; and a second planarization layer formed on a first part of an upper surface of the first conductivity type semiconductor layer; and a second transparent conductive oxide layer formed on the second planarization layer and on a second part of the first conductivity type semiconductor layer, the second transparent conductive oxide layer including a first portion in contact with the second planarization layer and including a second portion in contact with the first conductivity type semiconductor layer. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification