Semiconductor light emitting device

• US 9,530,941 B2
• Filed: 07/18/2013
• Issued: 12/27/2016
• Est. Priority Date: 07/18/2012
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: Jeon, Soo Kun, Park, Eun Hyun, Kim, Yong Deok
• Primary Examiner(s): Nguyen, Duy T
• Assistant Examiner(s): Jang, Bo Bin
• Application Number:
  US14/118,602
• Publication Number:
  US 20140231839A1
• Time in Patent Office: 1,258 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including an active layer, generating light via electron-hole recombination; a first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Claims

1. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;

a first electrode electrically connected with the first semiconductor layer for supplying electrons to the first semiconductor layer;

a second electrode electrically connected with the second semiconductor layer for supplying holes to the second semiconductor layer;

a non-conductive distributed bragg reflector interposed between the second electrode and the plurality of semiconductor layers, and coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and

a first light-transmitting film interposed between the second electrode and the non-conductive distributed bragg reflector and contacted with both the second electrode and the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the non-conductive distributed bragg reflector,

wherein the first light-transmitting film has a thickness greater than λ

/4 n, wherein λ

is a wavelength of light generated in the active layer and n is a refractive index of the first light-transmitting film,

wherein the first electrode is provided on the non-conductive distributed bragg reflector, and

wherein the device further comprises an electrical connection passing through the first light-transmitting film and the non-conductive distributed bragg reflector thereby electrically connecting the first semiconductor layer with the first electrode.

2. The semiconductor light emitting device of claim 1, further comprising:

a second light-transmitting film made of a dielectric material, interposed between the plurality of semiconductor layers and the non-conductive bragg reflector and contacted with the non-conductive bragg reflector, wherein the electrical connection passes through the first light-transmitting film, the non-conductive distributed bragg reflector and the second light-transmitting film thereby electrically connecting the first electrode with the first semiconductor layer.

3. The semiconductor light emitting device of claim 2, wherein the first light-transmitting film and the second light-transmitting film are composed of a same material.

4. The semiconductor light emitting device of claim 2, wherein the second light-transmitting film has a refractive index lower than the effective refractive index of the non-conductive distributed bragg reflector.

5. The semiconductor light emitting device of claim 2, further comprising:

an electrical connection passing through the first light-transmitting film, the non-conductive distributed bragg reflector and the second light-transmitting film thereby electrically connecting the second electrode with the second semiconductor layer.

6. The semiconductor light emitting device of claim 1, wherein the first light-transmitting film is composed of a dielectric material.

7. The semiconductor light emitting device of claim 1, wherein the first light-transmitting film is composed of SiO₂.

8. The semiconductor light emitting device of claim 1, further comprising:

an electrical connection passing through the first light-transmitting film and the non-conductive distributed bragg reflector thereby electrically connecting the second electrode with the second semiconductor layer.