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Light emitting device having multi-layered electrode structure

  • US 9,530,948 B2
  • Filed: 02/22/2016
  • Issued: 12/27/2016
  • Est. Priority Date: 08/18/2008
  • Status: Active Grant
First Claim
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1. A light-emitting device, comprising:

  • a conductive substrate;

    a semiconductor stacking layer comprising a first semiconductor layer on the conductive substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

    a mirror layer on the semiconductor stacking layer;

    a first barrier layer on the mirror layer; and

    a bonding layer on the first barrier layer,wherein the bonding layer comprises a first metal having a thickness between 1000 Å and

    42000 Å

    , andwherein the first barrier layer is between the mirror layer and the bonding layer, the first barrier layer comprises a plurality of first metal layers and a plurality of second metal layers alternately stacked, the material of the plurality of first metal layers is different from that of the plurality of second metal layers, and a thickness of each of the plurality of first metal layers is thicker than a thickness of each of the plurality of second metal layers.

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