Light emitting device having multi-layered electrode structure

• US 9,530,948 B2
• Filed: 02/22/2016
• Issued: 12/27/2016
• Est. Priority Date: 08/18/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Kuo, De-Shan, Ko, Ting-Chia, Tu, Chun-Hsiang, Chiu, Po-Shun
• Primary Examiner(s): HENRY, CALEB E
• Application Number:
  US15/049,917
• Publication Number:
  US 20160172557A1
• Time in Patent Office: 309 Days
• Field of Search: 257/88
• US Class Current: 1/1
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Claims

1. A light-emitting device, comprising:

a conductive substrate;

a semiconductor stacking layer comprising a first semiconductor layer on the conductive substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

a mirror layer on the semiconductor stacking layer;

a first barrier layer on the mirror layer; and

a bonding layer on the first barrier layer,

wherein the bonding layer comprises a first metal having a thickness between 1000 Å and

42000 Å

, and

wherein the first barrier layer is between the mirror layer and the bonding layer, the first barrier layer comprises a plurality of first metal layers and a plurality of second metal layers alternately stacked, the material of the plurality of first metal layers is different from that of the plurality of second metal layers, and a thickness of each of the plurality of first metal layers is thicker than a thickness of each of the plurality of second metal layers.

2. A light-emitting device according to claim 1, wherein the mirror layer comprises Al or Ag.

3. A light-emitting device according to claim 2, wherein the mirror layer comprises a thickness between 500 Å

and 5000 Å

.

4. A light-emitting device according to claim 1, further comprising a second barrier layer between the first barrier layer and the mirror layer.

5. A light-emitting device according to claim 4, wherein the second barrier layer comprises a plurality of third metal layers and a plurality of fourth metal layers alternately stacked, the material of the plurality of third metal layers is different from that of the plurality of fourth metal layers, and a thickness of each of the plurality of third metal layers is thicker than a thickness of each of the plurality of fourth metal layers.

6. A light-emitting device according to claim 5, wherein the third metal layer or the fourth metal layer comprises Cr, Pt, Ti, TiW, W, or Zn.

7. A light-emitting device according to claim 5, wherein the third barrier layer comprises a thickness between 500 Å

and 1500 Å

.

8. A light-emitting device according to claim 7, wherein the first metal layer or the second metal layer comprises Cr, Pt, Ti, TiW, W, or Zn, and the first metal layer is one to three times thicker than the second metal layer.

9. A light-emitting device according to claim 1, wherein the bonding layer comprises Au.

10. A light-emitting device comprising:

a conductive substrate;

a semiconductor stacking layer comprising a first semiconductor layer on the conductive substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

a mirror layer on the semiconductor stacking layer;

a first barrier layer on the mirror layer;

a bonding layer on the first barrier layer, the bonding layer comprises a first metal having a thickness between 1000 Å and

42000 Å

; and

a plurality of conductive layers between the bonding layer and the mirror layer, wherein the plurality of conductive layers is separated from each other by a single metal layer, one of the plurality of conductive layers comprises a thickness equal to or of the same order as that of another one of the plurality of conductive layers.

11. A light-emitting device according to claim 10, wherein the plurality of conductive layers comprises Al, Ag, or Cu.

17. A light-emitting device according to claim 10, wherein the first conductive layer and the second conductive layer comprise Al, Ag, or Cu.

12. A light-emitting device, comprising:

a substrate;

a semiconductor stacking layer comprising a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and

an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a first barrier layer, a conductive layer, a mirror layer between the conductive layer and the second semiconductor layer, and a second barrier layer between the conductive layer and the mirror layer;

wherein the first barrier layer comprises a plurality of first metal layers and a plurality of second metal layers alternately stacked, wherein the material of the plurality of first metal layers is different from that of the plurality of second metal layers and a thickness of each of the plurality of first metal layers is thicker than a thickness of each of the plurality of second metal layers,

wherein the conductive layer comprises a first conductive layer, a second conductive layer and a third barrier layer directly contacting the first conductive layer and directly contacting the second conductive layer, and the material of the third barrier layer is different from that of the first conductive layer and the second conductive layer, and the first conductive layer and the second conductive layer comprise the same material, and the thickness of the first conductive layer is of the same order as that of the second conductive layer.

13. A light-emitting device according to claim 12, wherein the mirror layer comprises Al or Ag.

14. A light-emitting device according to claim 13, wherein the mirror layer comprises a thickness between 500 Å

and 5000 Å

.

15. A light-emitting device according to claim 12, wherein the second barrier layer comprises Cr, Pt, Ti, TiW, W, or Zn.

16. A light-emitting device according to claim 12, wherein the first metal layer or the second metal layer comprises Cr, Pt, Ti, TiW, W, or Zn.