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Method of fabrication of Al/Ge bonding in a wafer packaging environment and a product produced therefrom

  • US 9,533,880 B2
  • Filed: 09/14/2015
  • Issued: 01/03/2017
  • Est. Priority Date: 03/18/2005
  • Status: Active Grant
First Claim
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1. A method for bonding a first substrate wafer and a second substrate wafer by creating an aluminum/germanium bond, a patterned aluminum layer disposed on the first substrate wafer, a patterned germanium layer disposed on the second substrate wafer, the method comprising:

  • placing the first substrate wafer in a first chuck;

    placing the second substrate wafer in a second chuck;

    aligning the first substrate wafer and the second substrate wafer; and

    forming a eutectic bond between the patterned germanium layer and the patterned aluminum layer, wherein the eutectic bond is formed by applying a force across the first chuck and the second chuck, and ramping temperature of at least one of the first chuck or the second chuck over a eutectic temperature of the aluminum/germanium bond to a predetermined temperature that is between the eutectic temperature of the aluminum/germanium bond and 450 degrees Celsius (C.).

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