Pattern failure discovery by leveraging nominal characteristics of alternating failure modes
First Claim
1. A computer-implemented method for detecting defects on a wafer, comprising:
- acquiring output for a wafer generated by an inspection system, wherein different dies are printed on the wafer with different process conditions, and wherein the different process conditions correspond to different failure modes for the wafer;
comparing the output generated for a first of the different dies printed with the different process conditions corresponding to a first of the different failure modes with the output generated for a second of the different dies printed with the different process conditions corresponding to a second of the different failure modes opposite to the first of the different failure modes, wherein the different process conditions corresponding to the different failure modes comprise process conditions at corners of a process window for the wafer, wherein the different process conditions corresponding to the first of the different failure modes are at a first of the corners of the process window, and wherein the different process conditions corresponding to the second of the different failure modes are at a second of the corners of the process window opposite to the first of the corners;
detecting defects on the wafer based on results of said comparing the output, wherein said acquiring, said comparing the output, and said detecting are performed by a computer system; and
determining he process window by;
simulating printing of the wafer to determine an expected process window;
acquiring additional output for another wafer generated the inspection system or another inspection system, wherein different dies are printed on the other wafer with additional process conditions, and wherein the additional process conditions comprise process conditions adjacent to expected corners of the expected process window and farther from nominal process conditions than the expected corners;
comparing the additional output generated for a first of the different dies printed on the other wafer with the additional process conditions adjacent to a first of the expected corners with the additional output generated for a second of the different dies printed on the other wafer with the additional process conditions adjacent to a second of the expected corners opposite from the first of the expected corners;
detecting detects on the other wafer based on results of comparing the additional output; and
determining the process window based on the defects detected on the other wafer.
1 Assignment
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Accused Products
Abstract
Methods and systems for detecting defects on a wafer are provided. One method includes acquiring output for a wafer generated by an inspection system. Different dies are printed on the wafer with different process conditions. The different process conditions correspond to different failure modes for the wafer. The method also includes comparing the output generated for a first of the different dies printed with the different process conditions corresponding to a first of the different failure modes with the output generated for a second of the different dies printed with the different process conditions corresponding to a second of the different failure modes opposite to the first of the different failure modes. In addition, the method includes detecting defects on the wafer based on results of the comparing step.
21 Citations
33 Claims
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1. A computer-implemented method for detecting defects on a wafer, comprising:
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acquiring output for a wafer generated by an inspection system, wherein different dies are printed on the wafer with different process conditions, and wherein the different process conditions correspond to different failure modes for the wafer; comparing the output generated for a first of the different dies printed with the different process conditions corresponding to a first of the different failure modes with the output generated for a second of the different dies printed with the different process conditions corresponding to a second of the different failure modes opposite to the first of the different failure modes, wherein the different process conditions corresponding to the different failure modes comprise process conditions at corners of a process window for the wafer, wherein the different process conditions corresponding to the first of the different failure modes are at a first of the corners of the process window, and wherein the different process conditions corresponding to the second of the different failure modes are at a second of the corners of the process window opposite to the first of the corners; detecting defects on the wafer based on results of said comparing the output, wherein said acquiring, said comparing the output, and said detecting are performed by a computer system; and determining he process window by; simulating printing of the wafer to determine an expected process window; acquiring additional output for another wafer generated the inspection system or another inspection system, wherein different dies are printed on the other wafer with additional process conditions, and wherein the additional process conditions comprise process conditions adjacent to expected corners of the expected process window and farther from nominal process conditions than the expected corners; comparing the additional output generated for a first of the different dies printed on the other wafer with the additional process conditions adjacent to a first of the expected corners with the additional output generated for a second of the different dies printed on the other wafer with the additional process conditions adjacent to a second of the expected corners opposite from the first of the expected corners; detecting detects on the other wafer based on results of comparing the additional output; and determining the process window based on the defects detected on the other wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A non-transitory computer-readable medium, storing program instructions executable on a computer system for performing a computer-implemented method for detecting defects on a wafer, wherein the computer-implemented method comprises:
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acquiring output for a wafer generated by an inspection system, wherein different dies are printed on the wafer with different process conditions, and wherein the different process conditions correspond to different failure modes for the wafer; comparing the output generated for a first of the different dies printed with the different process conditions corresponding to a first of the different failure modes with the output generated for a second of the different dies printed with the different process conditions corresponding to a second of the different failure modes opposite to the first of the different failure modes, wherein the different process conditions corresponding to the different failure modes comprise process conditions at corners of a process window for the wafer, wherein the different process conditions corresponding to the first of the different failure modes are at a first of the corners of the process window, and wherein the different process conditions corresponding to the second of the different failure modes are at a second of the corners of the process window opposite of the first of the corners; detecting defects on the wafer based on results of said comparing the output; and determining the process window by; simulating printing of the wafer to determine an expected process window; acquiring additional output for another wafer generated by the inspection system or another inspection system, wherein different dies are printed on the other wafer with additional process conditions, and wherein the additional process conditions comprise process conditions adjacent to expected corners of the expected process window and farther from nominal process conditions than the expected comers; comparing the additional output generated for a first of the different dies printed on the other wafer with the additional process conditions adjacent to a first of the expected corners with the additional output generated for a second of the different dies printed on the other wafer with the additional process conditions adjacent to a second of the expected corners opposite from the first of the expected corners; detecting defects on the other wafer based on results of comparing the additional output; and determining the process window based on the defects detected on the other wafer.
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18. A system configured to detect defects on a wafer, comprising:
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an inspection subsystem configured to generate output for a wafer, wherein different dies are printed on the wafer with different process conditions, and wherein the different process conditions correspond to different failure modes for the wafer; and a computer subsystem configured for; comparing the output generated for a first of the different dies printed with the different process conditions corresponding to a first of the different failure modes with the output generated for a second of the different dies printed with the different process conditions corresponding to a. second of the different failure modes opposite to the first of the different failure modes, wherein the different process conditions corresponding to the different failure modes comprise process conditions at corners of a process window for the wafer, wherein the different process conditions corresponding to the first of the different failure modes are at a first of the corners of the process window, and wherein the different process conditions corresponding to the second of the different failure modes are at a second of the corners of the process window opposite to the first of the corners; detecting defects on the wafer based on results of said comparing; and determining the process window by; simulating printing of the wafer to determine an expected process window; acquiring additional output for another wafer generated by the inspection system or another inspection system, wherein different dies are printed on the other wafer with additional process conditions and wherein the additional process conditions comprise process conditions adjacent to expected corners of the expected process window and farther from nominal process conditions than the expected corners; comparing the additional output generated for a first of the different dies printed on the other wafer with the additional process conditions adjacent to a first of the expected corners with the additional output generated for a second of the different dies printed on the other wafer with the additional process conditions adjacent to a second of the expected corners opposite from the first of the expected corners; detecting defects on the other wafer based on results of comparing the additional output; and determining the process window based on the defects detected on the other wafer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification