Semiconductor socket with direct selective metalization

• US 9,536,815 B2
• Filed: 03/14/2013
• Issued: 01/03/2017
• Est. Priority Date: 05/28/2009
• Status: Active Grant

• Current Assignee: HSIO Technologies LLC
• Original Assignee: HSIO Technologies LLC
• Inventors: Rathburn, James
• Primary Examiner(s): VU, HIEN D
• Application Number:
  US14/408,338
• Publication Number:
  US 20150279768A1
• Time in Patent Office: 1,391 Days
• Field of Search: 439/66, 439/81, 439/607.1
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2223/6666 for decoupling, e.g. bypass capacitors
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/81192 wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81385 Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/81901 Pressing the bump connector against the bonding areas by means of another connector detachable pressure contact H01L2224/72
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06531 Non-galvanic coupling, e.g. capacitive coupling
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/49861 : Lead-frames fixed on or encapsulated in insulating substrates H01L23/4985, H01L23/49805 take precedence
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/5222 : Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/642 : Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/72 : Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: Y10T 29/49204 : Contact or terminal manufacturing

Abstract

A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A conductive structure is disposed within the through holes A plurality of discrete contact members are located in the plurality of the through holes, within the conductive structure. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. The conductive structure can be electrically coupled to circuit geometry. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to desired circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.

Claims

1. A semiconductor socket comprising:

a plurality of through holes extending through a substrate from a first surface of the substrate to a second surface of the substrate, each of the plurality of through holes defined by an inner wall of the substrate extending between the first surface and the second surface;

a conductive material deposited around the inner walls of the plurality of holes to create a plurality of conductive structures;

at least one dielectric layer deposited on the inner walls and being bonded to the conductive structures; and

a plurality of discrete contact members disposed in the plurality of the through holes, the plurality of contact members each comprising a proximal end accessible from the second surface, and a distal end extending above the first surface, wherein the conductive structures extend around at least portion of each of the plurality of discrete contact members and the dielectric layer insulating the contact members from the conductive structures.

2. The semiconductor socket of claim 1, wherein the conductive structures comprise conductive sleeves.

3. The semiconductor socket of claim 1, wherein the conductive material comprises electro-less plated metal.

4. The semiconductor socket of claim 3, wherein the conductive structures comprise one of an antennae, and RF connector, or shielding.

5. The semiconductor socket of claim 1, wherein at least one of the plurality of conductive structures uniformly covers the corresponding inner wall of the substrate between the first surface and the second surface of the substrate.

6. The semiconductor socket of claim 1, wherein one or more of the conductive structures are electrically coupled to a ground plane.

7. The semiconductor socket of claim 1, wherein one or more of the conductive structures are electrically coupled to a power plane.

8. The semiconductor socket of claim 1, wherein one or more of the conductive structures are electrically coupled to one of the plurality of contact member.

9. The semiconductor socket of claim 1, wherein the substrate comprises a plurality of layers.

10. The semiconductor socket of claim 1, wherein the substrate comprises a circuitry plane, and wherein the conductive structures are electrically coupled to the circuitry plane.

11. The semiconductor socket of claim 1, further comprising:

conductive traces of a circuit geometry redistributing terminal pitch of the proximal ends of the contact members.

12. The semiconductor socket of claim 11, further comprising conductive plating on at least a portion of the conductive traces.