Light-emitting device

• US 9,536,904 B2
• Filed: 12/29/2015
• Issued: 01/03/2017
• Est. Priority Date: 12/27/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyake, Hiroyuki, Koezuka, Junichi, Jintyou, Masami, Shima, Yukinori, Yamazaki, Shunpei
• Primary Examiner(s): TAYLOR, EARL N
• Application Number:
  US14/982,042
• Publication Number:
  US 20160133651A1
• Time in Patent Office: 371 Days
• Field of Search: 257/43
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1237 with a different composition, shape, layout or thickness of the gate insulator in different devices
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

Claims

1. A light-emitting device comprising:

a pixel comprising a light-emitting element, a first transistor and a second transistor;

a first circuit configured to generate a signal including a value of current extracted from the pixel; and

a second circuit configured to correct an image signal by the signal,

wherein the first transistor is configured to control supply of current to the light-emitting element by the image signal,

wherein the second transistor is configured to control extraction of current from the pixel, and

wherein a semiconductor film of each of the first transistor and the second transistor comprises a semiconductor region overlapping with a gate electrode and having a carrier density less than or equal to 1×

10¹⁷/cm³.

2. The light-emitting device according to claim 1, wherein the semiconductor film is an oxide semiconductor film.

3. The light-emitting device according to claim 2,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

4. An electronic device comprising the light-emitting device according to claim 1, a microphone, and an operation key.

5. A light-emitting device comprising:

a first wiring and a second wiring;

a capacitor;

a light-emitting element;

a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor;

a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor;

a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor;

a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and an anode of the light-emitting element; and

the fifth transistor,

wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor, and

wherein a semiconductor film of each of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor comprises a semiconductor region overlapping with a gate electrode and having a carrier density less than or equal to 1×

10¹⁷/cm³.

6. The light-emitting device according to claim 5, wherein the semiconductor film is an oxide semiconductor film.

7. The light-emitting device according to claim 6,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

8. An electronic device comprising the light-emitting device according to claim 5, a microphone, and an operation key.

9. A light-emitting device comprising:

a pixel comprising a light-emitting element, a first transistor and a second transistor;

a first circuit configured to generate a signal including a value of current extracted from the pixel; and

a second circuit configured to correct an image signal by the signal,

wherein the first transistor is configured to control supply of current to the light-emitting element by the image signal,

wherein the second transistor is configured to control extraction of current from the pixel, and

wherein a semiconductor film of each of the first transistor and the second transistor comprises;

a first semiconductor region overlapping with a gate electrode;

a second semiconductor region in contact with a source electrode or a drain electrode; and

a third semiconductor region between the first semiconductor region and the second semiconductor region, a resistivity of the third semiconductor region is greater than or equal to 1 ×

10<sup>−

3</sup> Ω

cm and less than 1×

10⁴ Ω

cm.

10. The light-emitting device according to claim 9, wherein the semiconductor film is an oxide semiconductor film.

11. The light-emitting device according to claim 10,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

12. An electronic device comprising the light-emitting device according to claim 9, a microphone, and an operation key.

13. A light-emitting device comprising:

a first wiring and a second wiring;

a capacitor;

a light-emitting element;

a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor;

a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor;

a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor;

a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and an anode of the light-emitting element; and

the fifth transistor,

wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor, and

wherein a semiconductor film of each of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor comprises;

a first semiconductor region overlapping with a gate electrode;

a second semiconductor region in contact with a source electrode or a drain electrode; and

a third semiconductor region between the first semiconductor region and the second semiconductor region, a resistivity of the third semiconductor region is greater than or equal to 1 ×

10<sup>−

3</sup> Ω

cm and less than 1×

10⁴ Ω

cm.

14. The light-emitting device according to claim 13, wherein the semiconductor film is an oxide semiconductor film.

15. The light-emitting device according to claim 14,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

16. An electronic device comprising the light-emitting device according to claim 13, a microphone, and an operation key.

17. A light-emitting device comprising:

a pixel comprising a light-emitting element, a first transistor and a second transistor;

a first circuit configured to generate a signal including a value of current extracted from the pixel; and

a second circuit configured to correct an image signal by the signal,

wherein the first transistor is configured to control supply of current to the light-emitting element by the image signal,

wherein the second transistor is configured to control extraction of current from the pixel, and

wherein a variation in resistivity of a semiconductor film of each of the first transistor and the second transistor at temperatures from 150 K to 250 K is lower than ±

10%.

18. The light-emitting device according to claim 17, wherein the semiconductor film is an oxide semiconductor film.

19. The light-emitting device according to claim 18,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

20. An electronic device comprising the light-emitting device according to claim 17, a microphone, and an operation key.

21. A light-emitting device comprising:

a first wiring and a second wiring;

a capacitor;

a light-emitting element;

a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor;

a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor;

a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor;

a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and an anode of the light-emitting element; and

the fifth transistor,

wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor, and

wherein a variation in resistivity of a semiconductor film of each of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor at temperatures from 150 K to 250 K is lower than ±

10%.

22. The light-emitting device according to claim 21, wherein the semiconductor film is an oxide semiconductor film.

23. The light-emitting device according to claim 22,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

24. An electronic device comprising the light-emitting device according to claim 21, a microphone, and an operation key.

25. A light-emitting device comprising:

a pixel comprising a light-emitting element, a first transistor and a second transistor;

a first circuit configured to generate a signal including a value of current extracted from the pixel; and

a second circuit configured to correct an image signal by the signal,

wherein the first transistor is configured to control supply of current to the light-emitting element by the image signal,

wherein the second transistor is configured to control extraction of current from the pixel, and

wherein a first gate electrode of the first transistor is provided over a first semiconductor film of the first transistor and a second gate electrode of the second transistor is provided over a second semiconductor film of the second transistor.

26. The light-emitting device according to claim 25, wherein each of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.

27. The light-emitting device according to claim 26,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

28. An electronic device comprising the light-emitting device according to claim 25, a microphone, and an operation key.

29. A light-emitting device comprising:

a first wiring and a second wiring;

a capacitor;

a light-emitting element;

a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor;

a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor;

a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor;

a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and an anode of the light-emitting element; and

the fifth transistor,

wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor, and

wherein a first gate electrode of the first transistor is provided over a first semiconductor film of the first transistor and a second gate electrode of the second transistor is provided over a second semiconductor film of the second transistor.

30. The light-emitting device according to claim 29, wherein each of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.

31. The light-emitting device according to claim 30,

wherein the oxide semiconductor film contains indium, zinc, and M, and

wherein M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf.

32. An electronic device comprising the light-emitting device according to claim 29, a microphone, and an operation key.