Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film

• US 9,536,954 B2
• Filed: 10/29/2015
• Issued: 01/03/2017
• Est. Priority Date: 10/31/2014
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Watanabe, Yukimune
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US14/926,552
• Publication Number:
  US 20160126320A1
• Time in Patent Office: 432 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02447 Silicon carbide
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Abstract

A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask 4. The SiC film has a film 31 including openings 35 on the silicon substrate and a film 32 provided on the upper side of the film 31. The mask 4 has a mask 41 provided on the upper side of the silicon substrate and including openings 45 and a mask 42 covering at least part of the mask 41 located in the openings 35 and the side surfaces of the openings 35 and including openings 46. The width W1 of the opening 45, the thickness T1 (μm) of the mask 41, and the thickness D (μm) of the film 31 at a position corresponding to the opening 45 satisfy the following relationships: T1<tan(54.6°)×W1, and D≧tan(54.6°)×W1.

Claims

1. A substrate with a silicon carbide film, comprising:

a silicon substrate;

a first mask formed on part of the silicon substrate;

a first silicon carbide film formed on the silicon substrate and on the first mask;

a second mask formed on at least part of the first silicon carbide film; and

a second silicon carbide film formed on the first silicon carbide film and on the second mask, wherein

the first mask has multiple first openings where the silicon substrate is exposed,

the first silicon carbide film is formed so as to cover the first openings and the first mask, and also has a concave portion with an inclined side surface on an upper portion of the first mask, and

the second mask is formed on the concave portion.

2. The substrate with a silicon carbide film according to claim 1, wherein when the width of an opening portion of the first opening is represented by W1, the thickness of the first mask is represented by T1, and the thickness of the first silicon carbide film in the first opening is represented by D1, the following relationships are satisfied:

T1<

tan(54.6°

)×

W1, and

D1≧

tan(54.6°

)×

W1.

3. The substrate with a silicon carbide film according to claim 1, wherein the first mask and the second mask have substantially the same shape when the silicon substrate is seen in plan view.

4. The substrate with a silicon carbide film according to claim 1, wherein the upper surface of the silicon substrate has a plane orientation of (100).

5. The substrate with a silicon carbide film according to claim 1, wherein the second silicon carbide film is a cubic silicon carbide film.

6. The substrate with a silicon carbide film according to claim 1, wherein the first silicon carbide film is a cubic silicon carbide film.

7. A semiconductor device, wherein the substrate with a silicon carbide film according to claim 1 is used.

8. A semiconductor device, wherein the substrate with a silicon carbide film according to claim 2 is used.

9. A semiconductor device, wherein the substrate with a silicon carbide film according to claim 3 is used.

10. A semiconductor device, wherein the substrate with a silicon carbide film according to claim 4 is used.

11. A semiconductor device, wherein the substrate with a silicon carbide film according to claim 5 is used.

12. A semiconductor device, wherein the substrate with a silicon carbide film according to claim 6 is used.

13. A method for producing a substrate with a silicon carbide film, comprising:

a first step of forming a first mask on a silicon substrate;

a second step of forming a first silicon carbide film;

a third step of forming a second mask; and

a fourth step of forming a second silicon carbide film, wherein

the first step includes a step of forming a first thin film on the silicon substrate and a step of forming multiple first openings for exposing the silicon substrate in the first thin film, and when the width of the first opening is represented by W1, and the thickness of the first mask is represented by T1, the first openings are formed so as to satisfy the following relationship;

T1<

tan(54.6°

)×

W1,

the second step includes a step of epitaxially growing the first silicon carbide film from the surface of the silicon substrate exposed in the first openings, and when the thickness of the first silicon carbide film in the first opening is represented by D1, the first silicon carbide film is formed so as to satisfy the following relationship;

D1≧

tan(54.6°

)×

W1,

the third step includes a step of forming a second thin film on the first silicon carbide film and the first mask, and a step of forming multiple second openings for exposing the first silicon carbide film in the second thin film, and the second openings are formed so as to overlap the first openings in plan view, and

the fourth step includes a step of forming the second silicon carbide film from the second openings by epitaxial growth.

14. The method for producing a substrate with a silicon carbide film according to claim 13, wherein the second silicon carbide film is a cubic silicon carbide film.