Power semiconductor device having field plate electrode
First Claim
Patent Images
1. A semiconductor device comprising:
- a first semiconductor region of a first conductivity type;
a second semiconductor region of a second conductivity type and selectively provided on the first semiconductor region;
a third semiconductor region of the first conductivity type and selectively provided on the second semiconductor region;
a first electrode electrically connected to the first semiconductor region;
a second electrode provided on the third semiconductor region, and the second electrode electrically being connected to the third semiconductor region;
a third electrode extending in a second direction crossing a first direction from the first electrode toward the second electrode;
a fourth electrode provided on the first electrode side of the third electrode, and the fourth electrode extending in the second direction; and
a first insulating filmprovided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region,having a first insulating region, a second insulating region and a third insulating region,the first insulating region and the second insulating region being provided between the fourth electrode and the first semiconductor region, and arranged in the second direction,the third insulating region being provided between the third electrode and the second semiconductor region, and extending in the second direction,a first width between the fourth electrode and the first semiconductor region in the first insulating region being different from a second width between the fourth electrode and the first semiconductor region in the second insulating region, anda third width of the third insulating region being constant along the second direction.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes first to third semiconductor regions, first to fourth electrodes and a first insulating film. The first insulating film is provided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region. The first insulating film has a first insulating region, a second insulating region and a third insulating region. A first width in the first insulating region is different from a second width in the second insulating region. The first insulating region and the second insulating region are arranged in the direction. A third width of the third insulating region is constant along the second direction.
10 Citations
19 Claims
-
1. A semiconductor device comprising:
-
a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type and selectively provided on the first semiconductor region; a third semiconductor region of the first conductivity type and selectively provided on the second semiconductor region; a first electrode electrically connected to the first semiconductor region; a second electrode provided on the third semiconductor region, and the second electrode electrically being connected to the third semiconductor region; a third electrode extending in a second direction crossing a first direction from the first electrode toward the second electrode; a fourth electrode provided on the first electrode side of the third electrode, and the fourth electrode extending in the second direction; and a first insulating film provided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region, having a first insulating region, a second insulating region and a third insulating region, the first insulating region and the second insulating region being provided between the fourth electrode and the first semiconductor region, and arranged in the second direction, the third insulating region being provided between the third electrode and the second semiconductor region, and extending in the second direction, a first width between the fourth electrode and the first semiconductor region in the first insulating region being different from a second width between the fourth electrode and the first semiconductor region in the second insulating region, and a third width of the third insulating region being constant along the second direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
-
Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
-
InventorsKobayashi, Kenya
-
Primary Examiner(s)Maldonado, Julio J
-
Assistant Examiner(s)ESKRIDGE, CORY W
-
Application NumberUS14/837,822Publication NumberTime in Patent Office495 DaysField of Search257/330, 257/341, 257/E29.136, 257/E29.257, 438/259, 438/270US Class Current1/1CPC Class CodesH01L 29/0607 for preventing surface leak...H01L 29/0649 Dielectric regions, e.g. Si...H01L 29/402 Field platesH01L 29/407 Recessed field plates, e.g....H01L 29/42368 the thickness being non-uni...H01L 29/7813 with trench gate electrode,...
