Semiconductor device comprising a field electrode
First Claim
1. A semiconductor device, comprising:
- a gate electrode adjacent to a body region in a semiconductor substrate; and
a field electrode in a field plate trench in a main surface of the semiconductor substrate, the field plate trench having an extension length in a first direction parallel to the main surface, the extension length being less than the double of an extension length of the field electrode in a second direction that is perpendicular to the first direction and is parallel to the main surface, the extension length in the first direction being more than half of the extension length in the second direction, the field electrode being insulated from an adjacent drift zone by means of a field dielectric layer,wherein a field plate material of the field electrode has a resistivity in a range from 105 to 10−
1 Ohm·
cm.
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Accused Products
Abstract
A semiconductor device includes a gate electrode adjacent to a body region in a semiconductor substrate. The semiconductor device further includes a field electrode in a field plate trench in the main surface, the field plate trench having an extension length in a first direction parallel to a main surface. The extension length is less than the double of an extension length in a second direction that is perpendicular to the first direction parallel to the main surface. The extension length in the first direction is more than half of the extension length in the second direction. The field electrode is insulated from an adjacent drift zone by means of a field dielectric layer. A field plate material of the field electrode has a resistivity in a range from 105 to 10−1 Ohm·cm.
7 Citations
16 Claims
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1. A semiconductor device, comprising:
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a gate electrode adjacent to a body region in a semiconductor substrate; and a field electrode in a field plate trench in a main surface of the semiconductor substrate, the field plate trench having an extension length in a first direction parallel to the main surface, the extension length being less than the double of an extension length of the field electrode in a second direction that is perpendicular to the first direction and is parallel to the main surface, the extension length in the first direction being more than half of the extension length in the second direction, the field electrode being insulated from an adjacent drift zone by means of a field dielectric layer, wherein a field plate material of the field electrode has a resistivity in a range from 105 to 10−
1 Ohm·
cm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode adjacent to a body region in a semiconductor substrate; and a field electrode in a field plate trench in a main surface of the semiconductor substrate, the field plate trench extending at the main surface and being electrically coupled to a source terminal at a plurality of positions; and a contact plug for electrically coupling the field electrode to a terminal, the contact plug comprising a contact material having a resistivity in a range from 105 to 10−
1 Ohm·
cm. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a gate electrode adjacent to a body region in a semiconductor substrate; and a field electrode in a field plate trench in a main surface of the semiconductor substrate, the field plate trench having an extension length in a first direction, the extension length being less than the double of an extension length in a second direction that is parallel to the main surface and perpendicular to the first direction, the extension length in the first direction being more than half of the extension length in the second direction; and a contact plug for electrically coupling the field electrode to a terminal, the contact plug comprising a contact material having a resistivity between 105 to 10−
1 Ohm·
cm. - View Dependent Claims (16)
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Specification