Trench schottky rectifier device and method for manufacturing the same
First Claim
1. A method for fabricating a trench Schottky rectifier device, comprising steps of:
- providing a substrate having a first conductivity type;
forming a mask oxide layer on the substrate and forming a plurality of openings in the mask oxide layer;
forming a first plurality of trenches and a second plurality of trenches in the substrate according to the plurality of openings in the mask oxide layer;
forming a plurality of doped regions having a second conductivity type in the substrate under the first plurality of trenches and the second plurality of trenches;
forming an insulating layer on sidewalls of the first plurality of trenches and the second plurality of trenches;
filling the first plurality of trenches with a first plurality of conductive structures and filling the second plurality of trenches with a second plurality of conductive structures;
forming a first oxide layer covering on a first portion of the mask oxide layer and the first plurality of conductive structures;
removing a second portion of the mask oxide layer to expose the second plurality of conductive structures and a first portion of the substrate;
forming an electrode overlying the first oxide layer, the second plurality of conductive structures and the first portion of the substrate, wherein a Schottky contact forms between the electrode and the first portion of the substrate;
forming a patterned photoresist layer over the electrode;
etching off portions of the electrode and an adhesion layer according to the patterned photoresist layer;
removing the patterned photoresist layer; and
wherein the adhesion layer disposed between the first oxide layer and the electrode on the first portion of the substrate and disposed between the electrode and the second plurality of conductive structures on the second portion of the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as poly-silicon structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.
-
Citations
6 Claims
-
1. A method for fabricating a trench Schottky rectifier device, comprising steps of:
-
providing a substrate having a first conductivity type; forming a mask oxide layer on the substrate and forming a plurality of openings in the mask oxide layer; forming a first plurality of trenches and a second plurality of trenches in the substrate according to the plurality of openings in the mask oxide layer; forming a plurality of doped regions having a second conductivity type in the substrate under the first plurality of trenches and the second plurality of trenches; forming an insulating layer on sidewalls of the first plurality of trenches and the second plurality of trenches; filling the first plurality of trenches with a first plurality of conductive structures and filling the second plurality of trenches with a second plurality of conductive structures; forming a first oxide layer covering on a first portion of the mask oxide layer and the first plurality of conductive structures; removing a second portion of the mask oxide layer to expose the second plurality of conductive structures and a first portion of the substrate; forming an electrode overlying the first oxide layer, the second plurality of conductive structures and the first portion of the substrate, wherein a Schottky contact forms between the electrode and the first portion of the substrate; forming a patterned photoresist layer over the electrode; etching off portions of the electrode and an adhesion layer according to the patterned photoresist layer; removing the patterned photoresist layer; and wherein the adhesion layer disposed between the first oxide layer and the electrode on the first portion of the substrate and disposed between the electrode and the second plurality of conductive structures on the second portion of the substrate. - View Dependent Claims (2, 3, 4, 5, 6)
-
Specification