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Partially dielectric isolated fin-shaped field effect transistor (FinFET)

  • US 9,537,011 B1
  • Filed: 12/14/2015
  • Issued: 01/03/2017
  • Est. Priority Date: 12/14/2015
  • Status: Expired due to Fees
First Claim
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1. A method, comprising:

  • etching a fin of a fin-shaped field effect transistor (FinFET) to form a reduced fin;

    laterally etching the reduced fin to form a fin channel including a first fin channel sidewall and a second fin channel sidewall opposing the first fin channel sidewall;

    forming a first tunneling dielectric and a second tunneling dielectric on the first fin channel sidewall and the second fin channel sidewall, respectively, wherein each tunneling dielectric prevents lateral epitaxial crystal growth on the fin channel; and

    etching an insulator layer disposed between the fin channel and a substrate of the FinFET to expose portions of a substrate surface of the substrate, wherein a source epitaxy and a drain epitaxy are formed from vertical epitaxial crystal growth on the exposed portions of the substrate surface.

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