Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus

• US 9,540,743 B2
• Filed: 12/10/2014
• Issued: 01/10/2017
• Est. Priority Date: 12/11/2013
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Yonekura, Hiromasa, Takahashi, Kazuya, Furusawa, Yoshikazu, Okada, Mitsuhiro
• Primary Examiner(s): Tran, Long K
• Application Number:
  US14/566,069
• Publication Number:
  US 20150159295A1
• Time in Patent Office: 762 Days
• Field of Search: 438/151, 117/8, 117/200
• US Class Current: 1/1
• CPC Class Codes: C30B 1/023 from solids with amorphous structure
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: C30B 29/54 Organic compounds
• CPC Class Codes: Y10T 117/10 Apparatus

Abstract

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

Claims

1. A method of forming a crystallized silicon film by crystallization of amorphous silicones, comprising:

supplying a silicon raw material gas including an organic silicon compound onto a surface to be processed of an object to be processed;

supplying another silicon raw material gas excluding the organic silicon compound onto the surface to be processed; and

performing a crystallization treatment on amorphous silicon films formed on the surface to be processed to crystallize amorphous silicones contained in the amorphous silicon films.

2. A method of forming a crystallized silicon film by crystallization of amorphous silicones, comprising:

supplying a silicon raw material gas and a gas containing an impurity for suppressing the crystallization of the amorphous silicones onto a surface to be processed of an object to be processed;

after supplying the silicon raw material gas and the gas containing the impurity, supplying only the silicon raw material gas onto the surface to be processed; and

after supplying only the silicon raw material gas, performing a crystallization treatment on amorphous silicon films formed on the surface to be processed to crystallize the amorphous silicones contained in the amorphous silicon films.

3. The method of claim 2, wherein the impurity includes at least one of carbon, oxygen, and nitrogen.

4. The method of claim 2, wherein an insulating material is exposed from the surface to be processed.

5. The method of claim 4, wherein the insulating material includes a silicon oxide.

6. The method of claim 2, wherein processing temperatures in supplying a silicon raw material gas and supplying another silicon raw material gas are the same.

7. A method of manufacturing a semiconductor device using a crystallized silicon film obtained by crystallization of amorphous silicones, the method comprising:

forming the crystallized silicon film using the crystallized silicon film forming method of claim 2.

8. The method of claim 7, further comprising:

crystallizing other amorphous silicones using a thermal history obtained in a subsequent manufacturing process performed after the amorphous silicones are crystallized.