Pressure sensor structure

• US 9,541,464 B2
• Filed: 06/02/2014
• Issued: 01/10/2017
• Est. Priority Date: 06/04/2013
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Kuisma, Heikki
• Primary Examiner(s): ALLEN, ANDRE J
• Application Number:
  US14/293,317
• Publication Number:
  US 20140352446A1
• Time in Patent Office: 953 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
• CPC Class Codes: G01L 13/00 Devices or apparatus for measuring differences of two or more fluid pressure values
• CPC Class Codes: G01L 19/0654 against moisture or humidity
• CPC Class Codes: G01L 9/0072 using variations in capacitance
• CPC Class Codes: G01L 9/12 by making use of variations in capacitance , i.e. electric circuits therefor

Abstract

A microelectromechanical pressure sensor structure that comprises a planar base and side walls and a diaphragm plate. The side walls extend circumferentially away from the planar base to a top surface of the side walls. The planar base, the side walls and the diaphragm plate are attached to each other to form a hermetically closed gap in a reference pressure, and a top edge of the inner surfaces of the side walls forms a periphery of a diaphragm. The diaphragm plate comprises one or more planar material layers of which a first planar material layer spans over the periphery of the diaphragm. The top surface of the side walls comprises at least one isolation area that is not covered by the first planar material layer.

Claims

1. A microelectromechanical pressure sensor structure that comprises a planar base and a side wall layer and a diaphragm plate, wherein

the side wall layer forms side walls that extend as a circumference away from the planar base to a top surface of the side wall layer;

the planar base, the side wall layer and the diaphragm plate are attached to each other to form a hermetically closed gap in a reference pressure;

the top surface of the side wall layer comprises at least one isolation area that is not covered by the diaphragm plate.

2. A microelectromechanical pressure sensor structure of claim 1, wherein the isolation area extends from the outer surface of the side wall layer to a non-zero distance towards the gap on the top surface of the side wall layer.

3. A microelectromechanical pressure sensor structure of claim 1, wherein the isolation area is at least partly covered with insulating material.

4. A microelectromechanical pressure sensor structure of claim 3, wherein the insulating material extends as a layer on the top surface of the side wall layer from the outer surface of the side wall layer to the diaphragm plate.

5. A microelectromechanical pressure sensor structure of claim 4, wherein the layer of insulating material and the diaphragm plate are of equal thickness.

6. A microelectromechanical pressure sensor structure of claim 4, wherein the layer of insulating material covers the isolation area and at least part of a first planar material layer of the diaphragm plate.

7. A microelectromechanical pressure sensor structure of claim 6, further comprising a layer of conducting material that extends over the layer of insulating material from the outer surface of the side wall layer to a distance towards the gap.

8. A microelectromechanical pressure sensor structure of claim 1, wherein

the isolation area extends on the top surface of the side wall layer from a periphery of the diaphragm plate to a non-zero distance towards the outer surface of the side wall layer;

a guard element extends on the top surface of the side wall layer from the periphery of the isolation area towards the outer surface of the side wall layer.

9. A microelectromechanical pressure sensor structure of claim 8, wherein the guard element extends on the top surface of the side wall layer from the periphery of the isolation area to the outer surface of the side wall layer.

10. A microelectromechanical pressure sensor structure of claim 1, wherein the sensor structure comprises a reference plate that that has the same thickness as the diaphragm plate and extends on the isolation area on the top surface of the side wall layer separated from the diaphragm plate.

11. A microelectromechanical pressure sensor structure of claim 10, wherein

a top edge of the inner surfaces of the side walls forms a periphery of a diaphragm;

the diaphragm plate spans over the periphery of the diaphragm;

the pressure sensor structure comprises electrical leads to the planar base, to the diaphragm plate, and to the reference plate.

12. A microelectromechanical pressure sensor structure of claim 10, wherein the reference plate has the same form on the top surface of the side wall layer as the diaphragm plate.

13. A microelectromechanical pressure sensor structure of claim 10, wherein the reference plate has a circumferential form on the top surface of the side wall layer.

14. A microelectromechanical pressure sensor structure of claim 13, wherein the reference plate circumscribes the diaphragm plate on the top surface of the side wall layer.

15. A microelectromechanical pressure sensor structure of claim 10, wherein the reference plate has a winding perimeter on the top surface of the side wall layer.

16. A microelectromechanical pressure sensor structure of claim 15, wherein the reference plate has a comb-formed or meandering perimeter on the top surface of the side wall layer.

17. A microelectromechanical pressure sensor structure of claim 10, wherein the ratio of the length of the periphery of the diaphragm plate and the length of the periphery of the reference plate is adjusted to be equal to a weight coefficient of a reference plate capacitance in a compensated sensor capacitance.

18. A microelectromechanical pressure sensor structure of claim 17, wherein

an area through which the side wall layer and the diaphragm plate are attached to each other forms a diaphragm support area;

the ratio of the diaphragm support area to the area of the reference plate is equal to the weight coefficient of the reference plate capacitance in the compensated sensor capacitance.

19. A microelectromechanical pressure sensor structure of claim 10, wherein a weight coefficient of a reference plate capacitance in a compensated sensor capacitance equals to a value obtained by zeroing the weighted difference of two integrals

20. A microelectromechanical pressure sensor structure of claim 10, wherein the diaphragm plate and the reference plate are separated by a first trench that is formed by a region of isolation area between the diaphragm plate and the reference plate.

21. A microelectromechanical pressure sensor structure of claim 20, wherein

a second trench is formed by a part of the isolation area that circumscribes the diaphragm plate, the reference plate and the first trench;

a guard element extends on the top surface of the side wall layer from the periphery of the second trench towards the outer surface of the side wall layer.

22. A microelectromechanical pressure sensor structure of claim 21, wherein the guard element is a guard ring that circumscribes the diaphragm plate, the reference plate and the first trench.

23. A microelectromechanical pressure sensor structure of claim 21, wherein the first trench or the second trench, or both the first trench and the second trench are covered with insulating material.

24. A microelectromechanical pressure sensor structure of claim 23, wherein the first trench and the second trench are of equal width and are both covered or not covered with the insulating material.

25. A pressure sensor that comprises a pressure sensor structure of claim 1 and an electrical circuit connected to the pressure sensor structure.

26. A pressure sensor of claim 25, wherein

the electrical circuit is connected to electrical leads to the planar base, to the guard element and to the diaphragm plate;

the electrical circuit comprises an operational amplifier in a feed-back configuration connected to keep the guard element in a same potential with either of the planar base or the diaphragm plate, and to separate a current path through the guard element and the diaphragm plate from each other.

27. A pressure sensor of claim 26, wherein the operational amplifier is an inverting operational amplifier, or a non-inverting operational amplifier.

28. A pressure sensor of claim 25, wherein

the electrical circuit is connected to electrical leads to the planar base, to the layer of conducting material and to the diaphragm plate;

the electrical circuit comprises an operational amplifier in a feed-back configuration connected to keep a layer of conducting material in a same potential with either of the planar base or the diaphragm plate, and to separate a current path through the layer of conducting material and a current path through diaphragm plate from each other.

29. A pressure sensor of claim 28, wherein the operational amplifier is an inverting operational amplifier, or a non-inverting operational amplifier.