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Deposition of boron and carbon containing materials

  • US 9,543,140 B2
  • Filed: 10/15/2014
  • Issued: 01/10/2017
  • Est. Priority Date: 10/16/2013
  • Status: Active Grant
First Claim
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1. A method of depositing a BxC film on a substrate in a reaction space, comprising:

  • contacting the substrate with a vapor phase boron precursor at a process temperature of less than 400°

    C. to form the BxC film on the substrate, wherein x is 0.1 to 25, wherein the vapor phase boron precursor decomposes on the substrate, and wherein the BxC film has an etch rate in dilute hydrofluoric acid solution of less than 0.2 nm/min.

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