Deposition of boron and carbon containing materials
First Claim
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1. A method of depositing a BxC film on a substrate in a reaction space, comprising:
- contacting the substrate with a vapor phase boron precursor at a process temperature of less than 400°
C. to form the BxC film on the substrate, wherein x is 0.1 to 25, wherein the vapor phase boron precursor decomposes on the substrate, and wherein the BxC film has an etch rate in dilute hydrofluoric acid solution of less than 0.2 nm/min.
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Abstract
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
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Citations
20 Claims
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1. A method of depositing a BxC film on a substrate in a reaction space, comprising:
contacting the substrate with a vapor phase boron precursor at a process temperature of less than 400°
C. to form the BxC film on the substrate, wherein x is 0.1 to 25, wherein the vapor phase boron precursor decomposes on the substrate, and wherein the BxC film has an etch rate in dilute hydrofluoric acid solution of less than 0.2 nm/min.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a BxC film on a substrate in a reaction space, comprising:
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contacting a three-dimensional structure on the substrate with a vapor phase boron precursor at a process temperature of less than 400°
C. to form the BxC film on the three-dimensional structure, wherein x is 0.1 to 25, wherein the BxC film has a step coverage of greater than 80%, and wherein the BxC film has a wet etch rate in dilute hydrofluoric acid solution of less than 0.2 nm/min; andpurging the reaction space subsequent to contacting the three-dimensional structure on the substrate with the vapor phase boron precursor. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification