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Manufacturing method of semiconductor device

  • US 9,543,145 B2
  • Filed: 02/18/2016
  • Issued: 01/10/2017
  • Est. Priority Date: 04/27/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a first oxide semiconductor film;

    forming an insulating film over the first oxide semiconductor film;

    adding oxygen to the first oxide semiconductor film through the insulating film to form a second oxide semiconductor film; and

    heating the second oxide semiconductor film to form a third oxide semiconductor film,wherein each of a crystallinity of the first oxide semiconductor film and a crystallinity of the third oxide semiconductor film is higher than a crystallinity of the second oxide semiconductor film.

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