Manufacturing method of semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first oxide semiconductor film;
forming an insulating film over the first oxide semiconductor film;
adding oxygen to the first oxide semiconductor film through the insulating film to form a second oxide semiconductor film; and
heating the second oxide semiconductor film to form a third oxide semiconductor film,wherein each of a crystallinity of the first oxide semiconductor film and a crystallinity of the third oxide semiconductor film is higher than a crystallinity of the second oxide semiconductor film.
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Abstract
A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
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Citations
14 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; adding oxygen to the first oxide semiconductor film through the insulating film to form a second oxide semiconductor film; and heating the second oxide semiconductor film to form a third oxide semiconductor film, wherein each of a crystallinity of the first oxide semiconductor film and a crystallinity of the third oxide semiconductor film is higher than a crystallinity of the second oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; adding oxygen to the first oxide semiconductor film through the insulating film to form a second oxide semiconductor film; and heating the second oxide semiconductor film to form a third oxide semiconductor film, wherein each of a crystallinity of the first oxide semiconductor film and a crystallinity of the third oxide semiconductor film is higher than a crystallinity of the second oxide semiconductor film, wherein the third oxide semiconductor film contains a crystal having a c-axis which is substantially perpendicular to a top surface of the third oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification