Silicon and semiconducting oxide thin-film transistor displays
First Claim
1. An organic light-emitting diode display, comprising:
- a substrate;
an array of pixel circuits that form an active area of the substrate;
circuitry in an inactive area of the substrate;
dielectric layers that have a first thickness in the active area, are not present in the inactive area, and have a second thickness that is less than the first thickness between the active area and the inactive area, wherein each pixel circuit comprises;
an organic light-emitting diode;
a silicon transistor coupled in series with the organic light-emitting diode;
a storage capacitor coupled to the silicon transistor; and
a semiconducting oxide transistor coupled to the storage capacitor.
1 Assignment
0 Petitions
Accused Products
Abstract
An electronic device display may have an array of pixel circuits. Each pixel circuit may include an organic light-emitting diode and a drive transistor. Each drive transistor may be adjusted to control how much current flows through the organic light-emitting diode. Each pixel circuit may include one or more additional transistors such as switching transistors and a storage capacitor. Semiconducting oxide transistors and silicon transistors may be used in forming the transistors of the pixel circuits. The storage capacitors and the transistors may be formed using metal layers, semiconductor structures, and dielectric layers. Some of the layers may be removed along the edge of the display to facilitate bending. The dielectric layers may have a stepped profile that allows data lines in the array to be stepped down towards the surface of the substrate as the data lines extend into an inactive edge region.
-
Citations
16 Claims
-
1. An organic light-emitting diode display, comprising:
-
a substrate; an array of pixel circuits that form an active area of the substrate; circuitry in an inactive area of the substrate; dielectric layers that have a first thickness in the active area, are not present in the inactive area, and have a second thickness that is less than the first thickness between the active area and the inactive area, wherein each pixel circuit comprises; an organic light-emitting diode; a silicon transistor coupled in series with the organic light-emitting diode; a storage capacitor coupled to the silicon transistor; and a semiconducting oxide transistor coupled to the storage capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. An organic light-emitting diode display, comprising:
-
a flexible polymer substrate; an array of pixel circuits on the substrate, each pixel circuit including an organic light-emitting diode, at least two semiconducting oxide transistors each having a semiconducting oxide channel, at least one silicon transistor coupled in series with the organic light-emitting diode, and at least one storage capacitor; dielectric layers on the flexible polymer substrate that have a stepped profile that reduces in height when transitioning from the array of pixel circuits to an inactive area adjacent to the array of pixel circuits; and data lines on the dielectric layers that follow the stepped profile, wherein the dielectric layers include a dielectric layer that overlaps the at least one silicon transistor and that does not overlap the semiconducting oxide channels.
-
Specification