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Semiconductor structure and manufacturing method thereof

  • US 9,543,373 B2
  • Filed: 10/23/2013
  • Issued: 01/10/2017
  • Est. Priority Date: 10/23/2013
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate and a first circuit on the substrate;

    a metal structure comprising an active portion and a dummy portion, the active portion electrically coupled with the first circuit through a conductive plug, the dummy portion not being electrically coupled with any circuitry, the active portion and the dummy portion being on a same level of the metal structure;

    a semiconductor die bonded to the substrate through a first active bump via a conductive pad on an active surface of the semiconductor die, a passive surface of the semiconductor die contacting the dummy portion of the metal structure, wherein the passive surface is opposite to the active surface;

    a dummy bump connected to the dummy portion of the metal structure; and

    a molding compound between the substrate and the active surface of the semiconductor die and surrounding the conductive plug;

    wherein the dummy bump is surrounded by ambient air.

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