Semiconductor switching device including charge storage structure
First Claim
1. A semiconductor device, comprising:
- a first load terminal electrically connected to source zones of transistor cells, wherein the source zones form first pn junctions with body zones;
a second load terminal electrically connected to a drain construction forming second pn junctions with the body zones; and
control structures directly adjoining the body zones, the control structures comprising a control electrode and charge storage structures, the control electrode configured to control a load current through the body zones, the charge storage structures insulating the control electrode from the body zones and containing a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load terminal,wherein the body zones are formed in semiconductor mesas formed from portions of a semiconductor body and separated from each other by the control structures.
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Accused Products
Abstract
A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.
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Citations
22 Claims
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1. A semiconductor device, comprising:
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a first load terminal electrically connected to source zones of transistor cells, wherein the source zones form first pn junctions with body zones; a second load terminal electrically connected to a drain construction forming second pn junctions with the body zones; and control structures directly adjoining the body zones, the control structures comprising a control electrode and charge storage structures, the control electrode configured to control a load current through the body zones, the charge storage structures insulating the control electrode from the body zones and containing a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load terminal, wherein the body zones are formed in semiconductor mesas formed from portions of a semiconductor body and separated from each other by the control structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor switching device, comprising:
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transistor cells comprising source zones forming first pn junctions with body zones, the body zones forming second pn junctions with a drain construction; auxiliary cells comprising charge carrier transfer zones forming third pn junctions with desaturation portions of the drain construction; a first control structure comprising a first portion of a control electrode and configured to induce an inversion channel through the body zones in an on state; a second control structure directly adjoining the desaturation portions, the second control structure comprising a second portion of the control electrode and a charged layer sandwiched between the second portion of the control electrode and the desaturation portions and containing a control charge adapted to induce an inversion layer in the desaturation portions in the on state. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification