Method for manufacturing light emitting device

• US 9,543,465 B2
• Filed: 05/19/2015
• Issued: 01/10/2017
• Est. Priority Date: 05/20/2014
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Suzuki, Ryo, Takeuchi, Yoshikazu, Sasa, Hirokazu
• Primary Examiner(s): Rodriguez, Armando
• Application Number:
  US14/716,451
• Publication Number:
  US 20150340546A1
• Time in Patent Office: 602 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A method for manufacturing a light emitting device has: preparing a base body which comprises a pair of connection terminals; preparing a light emitting element which includes a substrate, a semiconductor laminate that is laminated on the substrate, and a pair of electrodes formed on the surface of the semiconductor laminate; joining the electrodes of the light emitting element to the connection terminals of the base body; covering the light emitting element with a sealing member; and removing at least a part of the sealing member and a part of the substrate of the light emitting element from the opposite side from the base body so that an upper surface of the sealing member is lower than an upper surface of the substrate of the light emitting element.

Claims

1. A method for manufacturing a light emitting device comprising:

preparing a base body which comprises a pair of connection terminals;

preparing a light emitting element which includes a substrate, a semiconductor laminate that is laminated on the substrate, and a pair of electrodes formed on the surface of the semiconductor laminate;

joining the electrodes of the light emitting element to the connection terminals of the base body;

covering the light emitting element with a sealing member; and

removing at least a part of the sealing member and a part of the substrate of the light emitting element from the opposite side from the base body so that an upper surface of the sealing member is lower than an upper surface of the substrate of the light emitting element.

2. The method for manufacturing a light emitting device according to claim 1, wherein the sealing member and the substrate are removed at the same time.

3. The method for manufacturing a light emitting device ng to claim 1, wherein the substrate is removed so that the thickness of the substrate is about 1 to 50 μ

m.

4. The method for manufacturing a light emitting device according to claim 1, further comprising

forming a light transmissive member on the surface from which the substrate of the light emitting element and the sealing member have been removed.

5. The method for manufacturing a light emitting device according to claim 4, wherein

the light transmissive member includes a phosphor.

6. The method for manufacturing a light emitting device according to claim 5, wherein the light transmissive member is formed by a spraying method.

7. The method for manufacturing a light emitting device according to claim 4, wherein the light transmissive member is formed with the thickness of 5 to 100 μ

m.

8. The method for manufacturing a light emitting device according to claim 1, wherein the sealing member is made of a light blocking material.

9. The method for manufacturing a light emitting device according to claim 1, wherein the sealing member covers the light emitting element so as to be in contact with side surfaces of the light emitting element.

10. The method for manufacturing a light emitting device according to claim 4, wherein an upper surface of the light transmissive member above the sealing member is formed lower than the upper surface of the light transmissive member above the light emitting element.

11. The method for manufacturing a light emitting device according to claim 1, wherein surface treatment is performed to the light emitting element from which the substrate has been removed.