High bandgap III-V alloys for high efficiency optoelectronics
First Claim
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1. An optoelectronic device comprising:
- a first device layer comprising an alloy consisting essentially of Al1-xInxP, wherein;
0.54≦
x<
1.0,the first device layer is at least partially ordered, andthe first device layer is configured to emit light;
a substrate comprising at least one of GaAs, Si, Ge, InP, or GaP; and
a first compositionally-graded buffer layer comprising;
a first step-grade buffer layer in contact with the substrate;
a second step-grade buffer layer in contact with the first device layer, andbetween one and six additional step-grade buffer layers positioned between the substrate and the first device layer, wherein;
the first step-grade buffer layer is substantially lattice-matched with the substrate,the second step-grade buffer layer is substantially lattice-matched with the first device layer, andeach additional step-grade buffer layer has a lattice constant that is between the lattice constants of its two immediate closest neighboring step-grade buffer layers.
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Abstract
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached.
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Citations
20 Claims
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1. An optoelectronic device comprising:
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a first device layer comprising an alloy consisting essentially of Al1-xInxP, wherein; 0.54≦
x<
1.0,the first device layer is at least partially ordered, and the first device layer is configured to emit light; a substrate comprising at least one of GaAs, Si, Ge, InP, or GaP; and a first compositionally-graded buffer layer comprising; a first step-grade buffer layer in contact with the substrate; a second step-grade buffer layer in contact with the first device layer, and between one and six additional step-grade buffer layers positioned between the substrate and the first device layer, wherein; the first step-grade buffer layer is substantially lattice-matched with the substrate, the second step-grade buffer layer is substantially lattice-matched with the first device layer, and each additional step-grade buffer layer has a lattice constant that is between the lattice constants of its two immediate closest neighboring step-grade buffer layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification