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Semiconductor device manufacturing method and substrate processing method including a cleaning method

  • US 9,546,422 B2
  • Filed: 03/13/2013
  • Issued: 01/17/2017
  • Est. Priority Date: 03/30/2012
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • mounting a processing substrate on a substrate mounting table member installed in a processing chamber that has a plurality of gas supply regions including a first processing region, a second processing region, a first purge region, and a second purge region, the first and second purge regions arranged between the first and second processing regions, wherein the plurality of gas supply regions are arranged radially with respect to a center of the processing chamber;

    forming a film on the processing substrate by simultaneously supplying a first processing gas from a first processing as supply unit to the first processing region and a second processing gas from a second processing gas supply unit to the second processing region;

    unloading the processing substrate from the processing chamber; and

    performing cleaning by simultaneously supplying an inert gas from a plurality of inert gas supply units to each of the plurality of gas supply regions and a cleaning gas from a cleaning gas supply unit different from the first and second processing gas supply units to all of the plurality of gas supply regions, independently controlling a flow rate of the inert gas supplied from each of the plurality of inert gas supply units to each of the plurality of gas supply regions, and controlling a density of the cleaning gas in each of the plurality of gas supply regions.

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