Semiconductor device manufacturing method and substrate processing method including a cleaning method

• US 9,546,422 B2
• Filed: 03/13/2013
• Issued: 01/17/2017
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Yanagisawa, Yoshihiko, Inada, Tetsuaki
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US14/387,978
• Publication Number:
  US 20150050815A1
• Time in Patent Office: 1,406 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/335 Cleaning
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01J 37/32889 Connection or combination with other apparatus
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

mounting a processing substrate on a substrate mounting table member installed in a processing chamber that has a plurality of gas supply regions including a first processing region, a second processing region, a first purge region, and a second purge region, the first and second purge regions arranged between the first and second processing regions, wherein the plurality of gas supply regions are arranged radially with respect to a center of the processing chamber;

forming a film on the processing substrate by simultaneously supplying a first processing gas from a first processing as supply unit to the first processing region and a second processing gas from a second processing gas supply unit to the second processing region;

unloading the processing substrate from the processing chamber; and

performing cleaning by simultaneously supplying an inert gas from a plurality of inert gas supply units to each of the plurality of gas supply regions and a cleaning gas from a cleaning gas supply unit different from the first and second processing gas supply units to all of the plurality of gas supply regions, independently controlling a flow rate of the inert gas supplied from each of the plurality of inert gas supply units to each of the plurality of gas supply regions, and controlling a density of the cleaning gas in each of the plurality of gas supply regions.

2. The method of claim 1,

wherein, in the act of performing cleaning, supply of an inert gas is controlled such that a flow rate of the inert gas supplied to the first and second purge regions is larger than a flow rate of the inert gas supplied to the first processing region.

3. The method of claim 1, wherein the first processing gas has a higher viscosity than that of the second processing gas, and wherein the supply of the inert gas is controlled such that a density of the cleaning gas in the first processing region is larger than a density of the cleaning gas in the second processing region.

4. The method of claim 1, wherein the act of performing cleaning includes passing a surface of the substrate mounting table member through the first processing region, the second processing region, the first purge region, and the second purge region, when the substrate mounting table member is rotated.

5. The method of claim 1, wherein the cleaning gas is supplied from the cleaning gas supply unit to the plurality of gas supply regions through a cleaning gas supply hole located at the center of the processing chamber.

6. A substrate processing method, the method comprising:

mounting a processing substrate on a substrate mounting table member installed in a processing chamber having a plurality of gas supply regions including a first processing region, a second processing region, a first purge region, and a second purge region, the first and second purge regions arranged between the first and second processing regions, wherein the plurality of gas supply regions are arranged radially with respect to a center of the processing chamber;

forming a film on the processing substrate by simultaneously supplying a first processing gas from a first processing gas supply unit to the first processing region and a second processing gas from a second processing gas supply unit to the second processing region;

unloading the processing substrate from the processing chamber; and

performing cleaning by simultaneously supplying an inert gas from a plurality of inert gas supply units to each of the plurality of gas supply regions and a cleaning gas from a cleaning gas supply unit different from the first and second processing as supply units to all of the plurality of gas supply regions, independently controlling a flow rate of the inert gas supplied from each of the plurality of inert gas supply units to each of the plurality of gas supply regions, and controlling a density of the cleaning gas in each of the plurality of gas supply regions.

7. The substrate processing method of claim 6, wherein the cleaning gas is supplied from the cleaning gas supply unit to the plurality of gas supply regions through a cleaning gas supply hole located at the center of the processing chamber.