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Apparatus and methods for predicting wafer-level defect printability

  • US 9,547,892 B2
  • Filed: 08/10/2015
  • Issued: 01/17/2017
  • Est. Priority Date: 05/06/2014
  • Status: Active Grant
First Claim
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1. A method of qualifying a photolithographic reticle, the method comprising:

  • using an optical reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a calibration reticle;

    recovering a reticle near field for each of the pattern areas of the calibration reticle based on the acquired images from each pattern area of the calibration reticle;

    using the recovered reticle near field for the calibration reticle, generating a lithography model for simulating a plurality of wafer images based on the reticle near field;

    using an optical reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle;

    recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle;

    applying the generated model to the reticle near field for the test reticle to simulate a plurality of test wafer images; and

    analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer.

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