Self aligned via and pillar cut for at least a self aligned double pitch
First Claim
1. A method of forming via openings comprising:
- forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer, the hardmask layer being present on an interlevel dielectric layer;
etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to define a first pillar of hardmask material;
etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening;
removing the plurality of mandrels;
etching the hardmask layer using the sidewall spacers to define a second pillar of hardmask material; and
etching the interlevel dielectric layer with the second pillar of hardmask material and a second via etch mask to provide a second via opening.
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Accused Products
Abstract
A method of forming via openings that includes forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer that is present on an interlevel dielectric layer. Etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to form a first pillar of hardmask material. The interlevel dielectric layer is etched using the first pillar of hardmask material as a mask to define a first via opening. The plurality of mandrels are removed. The hardmask layer is etched using the spacers to define a second pillar of hardmask material. The interlevel dielectric layer is etched using the second pillar of hardmask material to provide a second via opening.
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Citations
16 Claims
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1. A method of forming via openings comprising:
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forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer, the hardmask layer being present on an interlevel dielectric layer; etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to define a first pillar of hardmask material; etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening; removing the plurality of mandrels; etching the hardmask layer using the sidewall spacers to define a second pillar of hardmask material; and etching the interlevel dielectric layer with the second pillar of hardmask material and a second via etch mask to provide a second via opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming an electrically conductive structure comprising:
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etching a hardmask layer that is present atop an interlevel dielectric layer using a plurality of mandrels having dielectric spacers on sidewalls of the plurality of mandrels to define a first pillar of hardmask material; etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening; removing the plurality of mandrels; etching the hardmask layer with the dielectric spacers to define a second pillar of hardmask material; etching the interlevel dielectric layer with the second pillar of hardmask material and a second via etch mask to provide a second via opening; and filling the first and second via openings with an electrically conductive material. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification