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Structure for integration of an III-V compound semiconductor on SOI

  • US 9,548,319 B2
  • Filed: 03/10/2015
  • Issued: 01/17/2017
  • Est. Priority Date: 03/10/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a handle substrate of silicon or germanium that is miscut from 2 degrees to 8 degrees towards the <

    111>

    crystallographic direction or the <

    100>

    crystallographic direction;

    an III-V compound semiconductor pillar extending upward from one region of said handle substrate, wherein said III-V compound semiconductor pillar is in direct contact with a topmost surface of said handle substrate and is surrounded by dielectric material; and

    a top semiconductor material portion located over another region of said handle substrate, wherein said top semiconductor material portion is separated from said handle substrate by an insulator layer.

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