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High mobility devices with anti-punch through layers and methods of forming same

  • US 9,548,362 B2
  • Filed: 11/26/2014
  • Issued: 01/17/2017
  • Est. Priority Date: 10/10/2014
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, the method comprising:

  • forming an anti-punch through (APT) layer over a semiconductor substrate, wherein the APT layer comprises first APT dopants;

    forming a semiconductor layer over the APT layer;

    patterning the semiconductor layer and the APT layer to define;

    a first fin extending upwards from the semiconductor substrate, wherein the first fin comprises a first APT layer portion and a first semiconductor layer portion over the first APT layer portion; and

    a second fin comprising a second APT layer portion and a second semiconductor layer portion over the second APT layer portion;

    implanting second APT dopants in the second APT layer portion after forming the second semiconductor layer portion, wherein the second APT dopants are of a different type than the first APT dopants; and

    forming a conductive gate stack on a top surface and a sidewall of the first semiconductor layer portion of the first fin.

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