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High power insulated gate bipolar transistors

  • US 9,548,374 B2
  • Filed: 04/24/2014
  • Issued: 01/17/2017
  • Est. Priority Date: 08/17/2006
  • Status: Active Grant
First Claim
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1. A method of forming an insulated gate bipolar transistor (IGBT) device, comprising:

  • forming a p-type drift layer;

    forming an n-type well in the p-type drift layer;

    epitaxially growing a p-type channel adjustment layer on the p-type drift layer and on the n-type well;

    implanting p-type dopant ions to form a p-type emitter region that extends through the p-type channel adjustment layer and into the n-type well, the p-type emitter region at least partially defining a channel region in the n-type well adjacent the p-type emitter region;

    implanting n-type dopant ions to form an n-type connector region that is adjacent the p-type emitter region and extends through the channel adjustment layer and into the n-type well;

    forming a gate oxide layer on the channel region; and

    forming a gate on the gate oxide layer.

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