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Integrated MEMS pressure sensor and MEMS inertial sensor

  • US 9,550,668 B1
  • Filed: 08/25/2015
  • Issued: 01/24/2017
  • Est. Priority Date: 08/25/2015
  • Status: Active Grant
First Claim
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1. A method for fabricating an integrated MEMS device for pressure and inertial sensing, the method comprising:

  • forming a MEMS pressure sensor on a first side of a semiconductor substrate; and

    forming a MEMS inertial sensor on a second side of the semiconductor substrate, wherein the second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

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