Integrated MEMS pressure sensor and MEMS inertial sensor
First Claim
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1. A method for fabricating an integrated MEMS device for pressure and inertial sensing, the method comprising:
- forming a MEMS pressure sensor on a first side of a semiconductor substrate; and
forming a MEMS inertial sensor on a second side of the semiconductor substrate, wherein the second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.
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Abstract
Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.
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Citations
20 Claims
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1. A method for fabricating an integrated MEMS device for pressure and inertial sensing, the method comprising:
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forming a MEMS pressure sensor on a first side of a semiconductor substrate; and forming a MEMS inertial sensor on a second side of the semiconductor substrate, wherein the second side of the semiconductor substrate is opposite the first side of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a vertically integrated MEMS pressure sensor/inertial sensor device, the method comprising:
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providing a semiconductor substrate; processing a first side of the semiconductor substrate to form a MEMS pressure sensor; and processing a second side of the semiconductor substrate to form a MEMS inertial sensor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. An integrated MEMS device for pressure sensing and inertial sensing comprising:
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a semiconductor substrate having a first side and a second side opposite the first side; a MEMS pressure sensor located on the first side of the semiconductor substrate; and a MEMS inertial sensor located on the second side of the semiconductor substrate.
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Specification