Magnetic memory cell structure with spin device elements and method of operating the same
First Claim
1. A magnetic memory, comprising:
- a plurality of memory cells; and
a data identification circuit,wherein each of the memory cells includes;
a first bias node to which a first voltage is applied in a data reading, the first voltage being a positive voltage;
a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially a same absolute value as the first voltage;
a connection node;
a first spin device element connected between the first bias node and the connection node; and
a second spin device element connected between the connection node and the second bias node,wherein each of the first and second spin device elements is configured to have a first magnetization which is reversible and to take a selected one of first and second states depending on a direction of the first magnetization,wherein the first and second spin device elements are placed in different states selected from the first and second states, andwherein the data identification circuit identifies a data stored in each of the memory cells based on a polarity of a voltage generated on the connection node.
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Abstract
A magnetic memory includes a plurality of memory cells and a data identification circuit. Each of the memory cells includes: a first bias node to which a first voltage is applied in data reading, the first voltage being a positive voltage; a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially the same absolute value as the first voltage; a connection node; a first spin device element connected between the first bias node and the connection node; and a second spin device element connected between the connection node and the second bias node. The first and second spin device elements operate differentially. The data identification circuit identifies data stored in each of the memory cells based on a polarity of a voltage generated on the connection node.
28 Citations
27 Claims
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1. A magnetic memory, comprising:
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a plurality of memory cells; and a data identification circuit, wherein each of the memory cells includes; a first bias node to which a first voltage is applied in a data reading, the first voltage being a positive voltage; a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially a same absolute value as the first voltage; a connection node; a first spin device element connected between the first bias node and the connection node; and a second spin device element connected between the connection node and the second bias node, wherein each of the first and second spin device elements is configured to have a first magnetization which is reversible and to take a selected one of first and second states depending on a direction of the first magnetization, wherein the first and second spin device elements are placed in different states selected from the first and second states, and wherein the data identification circuit identifies a data stored in each of the memory cells based on a polarity of a voltage generated on the connection node. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A magnetic memory, comprising:
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a memory cell; and a data identification circuit, wherein the memory cell includes; a first bias node to which a first voltage is applied in a data reading from the memory cell; a second bias node to which a second voltage lower than the first voltage is applied in the data reading; a first connection node; a second connection node; a first spin device element connected between the first bias node and the first connection node; a second spin device element connected between the first connection node and the second bias node; a third spin device element connected between the first bias node and the second connection node; and a fourth spin device element connected between the second connection node and the second bias node, wherein each of the first to fourth spin device elements is configured to have a first magnetization which is reversible and to take a selected one of first and second states depending on a direction of the first magnetization, wherein the first and fourth spin device elements have a same state selected from the first and second states, wherein the second and third spin device elements have a same state selected from the first and second states, wherein the first and fourth spin device elements are placed in a different state from the second and third spin device elements, and wherein the data identification circuit identifies a data stored in the memory cell based on a voltage generated between the first connection node and the second connection node. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A magnetic memory, comprising:
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a memory cell; and a data identification circuit, wherein the memory cell includes; a first bias node to which a first voltage is applied in a data reading from the memory cell; a second bias node to which a second voltage lower than the first voltage is applied in the data reading; a first connection node; a second connection node; a first spin device element connected between the first bias node and the first connection node; a first resistor element connected between the first connection node and the second bias node; a second resistor element connected between the first bias node and the second connection node; and a second spin device element connected between the second connection node and the second bias node, wherein each of the first and second spin device elements is configured to have a first magnetization which is reversible and to take a selected one of first and second states depending on a direction of the first magnetization, wherein the first and second spin device elements have a same state selected from the first and second states, wherein the data identification circuit identifies a data stored in each of the memory cells based on a voltage generated between the first connection node and the second connection node. - View Dependent Claims (25)
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26. A method of operating a magnetic memory including a plurality of memory cells each comprising first and second bias nodes, a connection node, a first spin device element connected between the first bias node and the connection node, and a second spin device element connected between the connection node and the second bias node,
wherein each of the first and second spin device elements is configured to have a first magnetization which is reversible and to take selected one of first and second states depending on a direction of the first magnetization, wherein the first and second spin device elements are placed in different states selected from the first and second states, the method comprising: -
applying a first voltage to the first bias node, the first voltage being a positive voltage; applying a second voltage to the second bias node, the second voltage being a negative voltage having substantially a same absolute value as the first voltage; and identifying a data stored in each of the memory cells based on a polarity of a voltage generated on the connection node.
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27. A method of operating a magnetic memory which includes a memory cell comprising:
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first and second bias nodes; first and second connection nodes; a first spin device element connected between the first bias node and the first connection node; a second spin device element connected between the first connection node and the second bias node; a third spin device element connected between the first bias node and the second connection node; and a fourth spin device element connected between the second connection node and the second bias node, wherein each of the first to fourth spin device elements is configured to have a first magnetization which is reversible and to take selected one of first and second states depending on a direction of the first magnetization, wherein the first and fourth spin device elements have a same state selected from the first and second states, wherein the second and third spin device elements have a same state selected from the first and second states, and wherein the first and fourth spin device elements are placed in a different state from the second and third spin device elements, the method comprising; applying a first voltage to the first bias node; applying a second voltage lower than the first voltage to the second bias node; and identifying a data stored in the memory cell based on a third voltage generated on the first connection node and a fourth voltage generated on the second connection node.
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Specification